Abstract The integration of Deep Learning (DL) and the Internet of Things (IoT) has
revolutionized technology in the twenty-first century, enabling humans and machines to …

Gallium nitride (GaN) is an emerging wide-bandgap material with superior physical
characteristics, including critical electric field, electron mobility, and specific on-resistance …

This study addresses the critical gap in dynamic on-resistance characterization for GaN
HEMTs within the initial unstable state in a non-isolated DC-DC converter, where the output …

High-efficient and power-dense ac–dc power electronic converters are demanded for a wide
range of applications, such as motor drives and active rectifiers. The utilization of wide …

Recently, an omnidirectional wireless power transfer (WPT) has attracted attention as a
solution to the limitations of free-positioning and mobility of conventional WPT. However, the …

This article makes the comparisons on the behaviors of three types of commercial GaN
power switching devices, including Schottky gate p-GaN high electron mobility transistor …

Junction temperature is the most important factor to induce the insulated gate bipolar
transistor module failure and conduct operational management. In-situ calibrated method …

Integrated Motor Drives (IMDs) are gaining popularity in industrial Variable Speed Drive
(VSD) applications, thanks to their more compact realization and simpler installation …

We compare the switching losses of four equivalent silicon and wide-bandgap 650 V power
transistors operated in a hard-switched half-bridge configuration, switching 400 V at 40 A …

Gallium nitride high electron mobility transistors outperform Silicon devices due to their
excellent physical properties. However, being an immature technology, it exhibits dynamic …