Single event transients in digital CMOS—A review

V Ferlet-Cavrois, LW Massengill… - IEEE Transactions on …, 2013‏ - ieeexplore.ieee.org
The creation of soft errors due to the propagation of single event transients (SETs) is a
significant reliability challenge in modern CMOS logic. SET concerns continue to be …

Radiation effects in a post-Moore world

DM Fleetwood - IEEE Transactions on Nuclear Science, 2021‏ - ieeexplore.ieee.org
An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …

Scaling trends of digital single-event effects: A survey of SEU and SET parameters and comparison with transistor performance

D Kobayashi - IEEE Transactions on Nuclear Science, 2020‏ - ieeexplore.ieee.org
The history of integrated circuit (IC) development is another record of human challenges
involving space. Efforts have been made to protect ICs from sudden malfunctions due to …

Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies

B Narasimham, BL Bhuva, RD Schrimpf… - … on Nuclear Science, 2007‏ - ieeexplore.ieee.org
The distributions of SET pulse-widths produced by heavy ions in 130-nm and 90-nm CMOS
technologies are measured experimentally using an autonomous pulse characterization …

Single-event transient pulse quenching in advanced CMOS logic circuits

JR Ahlbin, LW Massengill, BL Bhuva… - … on Nuclear Science, 2009‏ - ieeexplore.ieee.org
Heavy-ion broad-beam experiments on a 130 nm CMOS technology have shown
anomalously-short single-event transient pulse widths. 3-D TCAD mixed-mode modeling in …

New insights into single event transient propagation in chains of inverters—Evidence for propagation-induced pulse broadening

V Ferlet-Cavrois, P Paillet, D McMorrow… - … on Nuclear Science, 2007‏ - ieeexplore.ieee.org
The generation and propagation of single event transients (SET) is measured and modeled
in SOI inverter chains with different designs. SET propagation in inverter chains induces …

Addressing transient and permanent faults in NoC with efficient fault-tolerant deflection router

C Feng, Z Lu, A Jantsch, M Zhang… - IEEE Transactions on …, 2012‏ - ieeexplore.ieee.org
Continuing decrease in the feature size of integrated circuits leads to increases in
susceptibility to transient and permanent faults. This paper proposes a fault-tolerant solution …

Investigation of the propagation induced pulse broadening (PIPB) effect on single event transients in SOI and bulk inverter chains

V Ferlet-Cavrois, V Pouget, D McMorrow… - … on Nuclear Science, 2008‏ - ieeexplore.ieee.org
The propagation of single event transients (SET) is measured and modeled in SOI and bulk
inverter chains. The propagation-induced pulse broadening (PIPB) effect is shown to …

The effect of layout topology on single-event transient pulse quenching in a 65 nm bulk CMOS process

JR Ahlbin, MJ Gadlage, DR Ball… - … on Nuclear Science, 2010‏ - ieeexplore.ieee.org
Heavy-ion microbeam and broadbeam data are presented for a 65 nm bulk CMOS process
showing the existence of pulse quenching at normal and angular incidence for designs …

Scaling trends in SET pulse widths in sub-100 nm bulk CMOS processes

MJ Gadlage, JR Ahlbin, B Narasimham… - … on Nuclear Science, 2010‏ - ieeexplore.ieee.org
Digital single-event transient (SET) measurements in a bulk 65-nm process are compared to
transients measured in 130-nm and 90-nm processes. The measured SET widths are …