Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application
This paper studies band-to-band tunneling in the transverse and lateral directions of van der
Waals MoS2/WSe2 heterojunctions. We observe room-temperature negative differential …
Waals MoS2/WSe2 heterojunctions. We observe room-temperature negative differential …
Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors
Two-dimensional layered semiconductors present a promising material platform for band-to-
band-tunneling devices given their homogeneous band edge steepness due to their …
band-tunneling devices given their homogeneous band edge steepness due to their …
Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology
The tunnel field-effect transistor (TFET) is one of the candidates replacing conventional
metal–oxide–semiconductor field-effect transistors to realize low-power-consumption large …
metal–oxide–semiconductor field-effect transistors to realize low-power-consumption large …
Band-edge steepness obtained from Esaki/backward diode current–voltage characteristics
While science has good knowledge of semiconductor bandgaps, there is not much
information regarding the steepness of the band edges. We find that a plot of absolute …
information regarding the steepness of the band edges. We find that a plot of absolute …
B-Doped δ-Layers and Nanowires from Area-Selective Deposition of BCl3 on Si(100)
Atomically precise, δ-doped structures forming electronic devices in Si have been routinely
fabricated in recent years by using depassivation lithography in a scanning tunneling …
fabricated in recent years by using depassivation lithography in a scanning tunneling …
Molecular Engineering of 2D Nanomaterial Field‐Effect Transistor Sensors: Fundamentals and Translation across the Innovation Spectrum
Over the last decade, 2D layered nanomaterials have attracted significant attention across
the scientific community due to their rich and exotic properties. Various nanoelectronic …
the scientific community due to their rich and exotic properties. Various nanoelectronic …
Investigation of the dielectrically modulated electron hole bilayer tunnel field effect transistor for biomolecule detections
J Palepu, S Patel, S Sinha, RK Mallidi… - Current Applied …, 2023 - Elsevier
This work investigates a Dielectrically Modulated Electron-Hole Bilayer Tunnel Field Effect
Transistor (DM-EHBTFET) architecture for biosensing applications using extensive …
Transistor (DM-EHBTFET) architecture for biosensing applications using extensive …
P-channel TFET operation of bilayer structures with type-II heterotunneling junction of oxide-and group-IV semiconductors
We propose a p-channel bilayer TFET composed of an n-type oxide semiconductor (n-OS)/p-
type group-IV semiconductor (p-IV) heterostructure, allowing us to realize both n-and p …
type group-IV semiconductor (p-IV) heterostructure, allowing us to realize both n-and p …
Low sub-threshold swing realization with contacts of graphene/h-BN/MoS2 heterostructures in MoS2 transistors
MoS 2 and other atomically thin-layered semiconductors have attracted intensive interest for
their unique characteristics and have become promising candidates for short-channel …
their unique characteristics and have become promising candidates for short-channel …
Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities
In a continuous search for the energy-efficient electronic switches, a great attention is
focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of …
focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of …