Wide bandgap (WBG) devices offer the advantages of high frequency, high efficiency, and
high power density to power converters due to their excellent performance. However, their …

Driving solutions for power semiconductor devices are experiencing new challenges since
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …

Power semiconductor devices are often connected in parallel to increase the current rating
of the power conversion systems. However, due to mismatched circuit parameters or …

This article gives insights into recent developments in the field of power semiconductor gate
drivers that exhibit intelligent features. Such features are active switching transient control …

The silicon carbide (SiC) devices have faster switching speed than that of the conventional
silicon (Si) devices, which however may cause excessive device voltage overshoot. Larger …

Application of wide bandgap power devices enables the power electronics system to
achieve higher efficiency, improved power density and reduced weight. Wide range LLC …

This article first develops a radiated electromagnetic interference (EMI) model for a gallium
nitride (GaN) integrated circuit (IC)-based active clamp flyback converter. Important …

Silicon carbide (SiC) power devices have been extensively for high-power-density
application scenarios. To increase the current rating, SiC devices are usually connected in …

This paper reviewed the state-of-the-art wide band-gap (WBG) technology from material
level to system level. The properties of semiconductor materials, ie, silicon carbide and …

Parallel-connected power device is an extensively applied solution in the industry to
increase the current rating of the converter system. However, due to the undesired printed …