We discuss non-volatile memories (NVM) for space applications. The focus will be both on
technologies and devices aimed at the mainstream commercial markets and on rad-hard …

Gate dielectric damage caused by both internal and external stresses is becoming worse
because of aggressive complementary metal–oxide–semiconductor (CMOS) scaling …

We review ionizing radiation effects in Flash memories, the current dominant technology in
the commercial non-volatile memory market. A comprehensive discussion of total dose and …

There is an invisible enemy that constantly threatens the operation of electronics: ionizing
radiation. From sea level to outer space, ionizing radiation is virtually everywhere. At sea …

Measuring single-event transient (SET) pulse widths is critical for develo** proper
mitigation schemes to single-event effects (SEE), especially for advanced technologies. This …

This article presents the results of a 2-D finite element simulation study of the gate damages
induced by heavy-ion irradiation in SiC power metal-oxide-semiconductor field-effect …

The accumulated radiation effects of preirradiation from different radiation sources on single-
event burnout (SEB) of silicon carbide metal-oxide-semiconductor field-effect transistors …

Total ionizing dose (TID) effects from Co-60 gamma ray and heavy ion irradiation were
studied at the 22-nm FD SOI technology node and compared with the testing results from the …

The objective of the paper is to present a trap assisted conduction mechanism able to
explain the creation of a conductive path in the gate oxide of SiC power MOSFET during the …

Pre-irradiation device characteristics, gamma radiation response, and possible use in
radiation dosimetry have been investigated for MOSFETs with a 100 nm thick Er 2 O 3 gate …