This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Memristors, a two-terminal device, have a resistance that can be changed and retained in
two or more different states when subjected to electrical stresses. This unique function …

Memristive devices are two-terminal devices that can change their resistance state upon
application of appropriate voltage stimuli. The resistance can be tuned over a wide …

Boron-doped diamond (BDD) has proved to be an ideal anode material for the electrolysis of
organic sewage. However, the existing two dimensional BDD electrodes with small active …

We report a modulation of oxygen vacancies profile in atomic layer deposition (ALD) HfO 2-x
thin films by reducing oxidant pulse time (0.7 s–0.1 s) and study its effect on resistive …

The improved resistive switching (RS) characteristics of Pt/HfO 2/Ti structured RRAM are
demonstrated by engineering interface with argon (Ar) plasma irradiation. The Ar plasma …

This work reports on the bipolar resistive switching (RS) characteristics and possible
applicability to transparent synaptic devices when an ultrathin Al 2 O 3 interfacial layer is …

Hopfield neural network has been widely used in image recognition because of its
associative memory behavior. In this paper, a memristor neural network circuit is designed …

As memristor-simulating synaptic devices have become available in recent years, the
optimization on non-linearity degree (NL, related to adjacent conductance values) is …

The discovery of the ferroelectric orthorhombic phase in doped hafnia films has sparked
immense research efforts. Presently, a major obstacle for hafnia's use in high‐endurance …