Deep levels in n-type 4H-silicon carbide epitaxial layers investigated by deep-level transient spectroscopy and isochronal annealing studies
Deep levels were investigated by the capacitance mode deep-level transient spectroscopy
(C-DLTS) on 4H-SiC Schottky barrier diodes fabricated on 50 μm-thick n-type 4HSiC …
(C-DLTS) on 4H-SiC Schottky barrier diodes fabricated on 50 μm-thick n-type 4HSiC …
Investigation Of Wide Bandgap Semiconductor Devices For Radiation Detection Applications
RO Pak - 2016 - scholarcommons.sc.edu
Radioactive materials, as they decay, generate different high-frequency electromagnetic
radiation such as alpha particles, beta particles, x-rays, gamma-rays, and neutrons. Nuclear …
radiation such as alpha particles, beta particles, x-rays, gamma-rays, and neutrons. Nuclear …