The Boltzmann transport equation is commonly considered to be the best semi-classical
description of carrier transport in semiconductors, providing precise information about the …

The physics of electron transport in bulk silicon is investigated by using a newly developed
Monte Carlo simulator which improves the state‐of‐the‐art treatment of hot carrier …

The electron dynamics for electron energies up to 5 eV has been studied by soft x-ray
photoemission spectroscopy. Monte Carlo simulations have been performed to derive the …

A spherical harmonics expansion method of the Boltzmann Transport Equation (BTE) is
applied to investigate the carrier energy spectrum of a two-dimensional MOSFET up to 3 eV …

This work is a systematic investigation of the feasibility of MOSFET's with a gate length
below 0.1/spl mu/m. Limits imposed on the scalability of oxide thickness and supply voltage …

The. impact ionization rate in silicon is numerically derived from wave functions and energy
band structure based on an empirical pseudopotential method. The calculated impact …

The Spherical-Harmonics solution of the Boltzmann Transport Equation (BTE) in silicon is
generalized to the full-band case for both electrons and holes. The relevant scattering …

A brief review of the semiclassical Monte Carlo (MC) method for semiconductor device
simulation is given, covering the standard MC algorithms, variance reduction techniques, the …

A spherical harmonics expansion method of the Boltzmann Transport Equation (BTE) in the
three-dimensional space is proposed. The method is quite general in terms of scattering …

A new model for impact ionization in Si is presented, which goes beyond the limitations of
the Keldysh formula and is based on a more realistic scheme developed starting from a first …