Structurally different from conventional oxide ferroelectrics with rigid lattices, van der Waals
(vdW) ferroelectrics have stable layered structures with a combination of strong intralayer …

The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …

The discovery of ferroelectricity in oxides that are compatible with modern semiconductor
manufacturing processes, such as hafnium oxide, has led to a re-emergence of the …

Abstract The Computational 2D Materials Database (C2DB) is a highly curated open
database organising a wealth of computed properties for more than 4000 atomically thin two …

Ferroelectrics are a class of materials that possess a variety of interactions between
electrical, mechanical, and thermal properties that have enabled a wealth of functionalities …

The rapid increase in information in the big-data era calls for changes to information-
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …

Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs)
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …

The global demand for data storage and processing has increased exponentially in recent
decades. To respond to this demand, research efforts have been devoted to the …

Ferroelectric materials are characterized by two stable polarization states that can be
switched from one to another by applying an electrical field. As one of the most promising …