Impedance spectroscopy of Cu2SnS3 material for photovoltaic applications

L Essaleh, H Chehouani, M Belaqziz, K Djessas… - Superlattices and …, 2015 - Elsevier
The complex impedance spectroscopy in the frequency range 100–1 MHz and temperature
range 300–475 K is used to study the electrical properties of the bulk ternary semiconductor …

Growing Cu2ZnSnS4 Thin Film at Low Temperature Using a New Improved Configuration of Close‐Distance CVD Technique

M Belaqziz, K Medjnoun, H Chehouani… - Crystal Research …, 2023 - Wiley Online Library
This study presents a new possibility to deposit the polycrystalline Cu2ZnSnS4 (CZTS) thin
film at low temperature using an improved close‐distance chemical vapor deposition …

CuIn0.7Ga0.3Se2 thin films' properties grown by close-spaced vapor transport technique for second-generation solar cells

N Oulmi, A Bouloufa, A Benhaya… - Materials for Renewable …, 2019 - Springer
Abstract In this paper, CuIn 0.7 Ga 0.3 Se 2 (CIGS) thin films are deposited on both glass
(SLG) and glass/SnO 2: F (SLG/FTO) substrates, by close-spaced vapor transport technique …

Analytical modeling and optimization of original bifacial solar cells based on Cu (In, Ga) Se2 thin films absorbers

A Mouhoub, A Bouloufa, K Djessas… - Superlattices and …, 2018 - Elsevier
In this article, thin films CuGa 0.3 In 0.7 Se 2 (CIGS) layers were grown onto soda lime glass
(SLG) substrates and transparent conducting oxide (SnO 2: F) using close-spaced vapor …

Effects of temperature, pressure and pure copper added to source material on the CuGaTe2 deposition using close spaced vapor transport technique

O Abounachit, H Chehouani, K Djessas - Thin solid films, 2013 - Elsevier
The quality of CuGaTe 2 (CGT) thin films elaborated by close spaced vapor transport
technique has been studied as a function of the source temperature (TS), iodine pressure (P …

VRH and NSPT conduction mechanisms in CuIn0. 7Ga0. 3Se2 near the liquid nitrogen temperature

L Essaleh, S Amhil, H Chehouani, M Belaqziz… - Physica B: Condensed …, 2021 - Elsevier
Variable range hop** conduction process of Shklovskii-Efros type is identified, for the first
time, in CuIn 0.7 Ga 0.3 Se 2 bulk material in the temperature range [-190° C,− 10° C]. Two …

Structural, Optical and Electrical Properties of CuIn0.7Ga0.3Se2 Ingot Prepared by Direct Melting

S Lahlali, M Belaqziz, S Amhil, L Essaleh… - Journal of Electronic …, 2020 - Springer
Abstract CuIn 0.7 Ga 0.3 Se 2 (CIGS) ingots were prepared by reaction of high-purity
elements in stoichiometric proportions. The direct melting of elements was carried out using …

Physical properties of CuIn0. 7Ga0. 3Se2 ingot and thin films prepared by one-step rf-magnetron sputtering from single-target material

I Bouchama, K Djessas, MA Saeed - Journal of Molecular Structure, 2020 - Elsevier
Nowadays, large area CuIn 1-x Ga x Se 2 (CIGS) thin film fabrication by one-step radio-
frequency magnetron sputtering is still facing difficulties and challenges in uniformity of …

Structural, electrical and optical properties of CuIn0. 8Ga0. 2S2 thin film deposited by close spaced vapor transport technique

M Lasladj, A Bouloufa, S Kerour, K Djessas - Superlattices and …, 2021 - Elsevier
Abstract High quality CuIn 0.8 Ga 0.2 S 2 (CIGS) absorber material for thin film solar cells
applications was deposited on soda lime glass substrate through the close spaced vapor …

Modeling and experimental investigation of the close-spaced vapor transport process for the growth of CuIn (S0, 4Se0, 6) 2 thin films

O Abounachit, M Belaqziz, H Chehouani, B Viallet… - Thin Solid Films, 2018 - Elsevier
This paper reports the prediction of optimal conditions to grow good quality crystalline thin
films using the Close-Spaced Vapor Transport process. A new configuration of the horizontal …