GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Stability and reliability of lateral GaN power field-effect transistors
JA Del Alamo, ES Lee - IEEE Transactions on Electron Devices, 2019 - ieeexplore.ieee.org
GaN electronics constitutes a revolutionary technology with power handling capabilities that
amply exceed those of Si and other semiconductors in many applications. RF, microwave …
amply exceed those of Si and other semiconductors in many applications. RF, microwave …
Current understanding of bias-temperature instabilities in GaN MIS transistors for power switching applications
M Ťapajna - Crystals, 2020 - mdpi.com
GaN-based high-electron mobility transistors (HEMTs) have brought unprecedented
performance in terms of power, frequency, and efficiency. Application of metal-insulator …
performance in terms of power, frequency, and efficiency. Application of metal-insulator …
AC-capacitance techniques for interface trap analysis in GaN-based buried-channel MIS-HEMTs
Effective interface trap characterization approaches are indispensable in the development of
gate stack and dielectric surface passivation technologies in III-nitride (III-N) insulated-gate …
gate stack and dielectric surface passivation technologies in III-nitride (III-N) insulated-gate …
Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
In this paper, three electrical techniques (frequency dependent conductance analysis, AC
transconductance (AC-g m), and positive gate bias stress) were used to evaluate three …
transconductance (AC-g m), and positive gate bias stress) were used to evaluate three …
[LIVRE][B] Metrology and Diagnostic Techniques for Nanoelectronics
Z Ma, DG Seiler - 2017 - taylorfrancis.com
Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …
Trap** and reliability issues in GaN-based MIS HEMTs with partially recessed gate
This paper reports an extensive analysis of the trap** and reliability issues in AlGaN/GaN
metal insulator semiconductor (MIS) high electron mobility transistors (HEMTs). The study …
metal insulator semiconductor (MIS) high electron mobility transistors (HEMTs). The study …
Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiNx/III-nitride heterostructures
Silicon nitride (SiN x) grown by low-pressure chemical vapor deposition (LPCVD) at a
reduced growth temperature (650° C), is utilized for fabrication of GaN metal–insulator …
reduced growth temperature (650° C), is utilized for fabrication of GaN metal–insulator …
Review of bias-temperature instabilities at the III-N/dielectric interface
C Ostermaier, P Lagger, M Reiner, D Pogany - Microelectronics Reliability, 2018 - Elsevier
Two particular defects are commonly discussed at the III-N interface: the required donor
states, known to exist from the formation of the two-dimensional electron gas (2DEG) below …
states, known to exist from the formation of the two-dimensional electron gas (2DEG) below …
ESD reliability of AlGaN/GaN HEMT technology
B Shankar, S Raghavan… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
This experimental study reports new aspects of electrostatic discharge (ESD) behavior in
AlGaN/GaN HEMTs. The role of Schottky gate and MESA is investigated using special test …
AlGaN/GaN HEMTs. The role of Schottky gate and MESA is investigated using special test …