Multiferroic materials promise a tantalizing perspective of novel applications in next-
generation electronic, memory, and energy harvesting technologies, and at the same time …

A promising approach to the next generation of low-power, functional, and green
nanoelectronics relies on advances in the electric-field control of lattice, charge, orbital, and …

Conventional CMOS based logic and magnetic based data storage devices require the
shuttling of electrons for data processing and storage. As these devices are scaled to …

The deterministic rotation of magnetization by electric fields is a challenging issue for future
low-power spintronics. In a Co/0.7 Pb (Mg1/3Nb2/3) O3-0.3 PbTiO3 multiferroic …

Demonstration of ultralow energy switching mechanisms is imperative for continued
improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) order and their …

The switchable photovoltaic effect in BiFeO 3 thin films capacitors has been studied
extensively. However, the origin of the photovoltaic response is still under debate. Both bulk …

Forthcoming low-energy consumption oxide electronics rely on the deterministic control of
ferroelectric and multiferroic domain states at the nanoscale. In this review, we address the …

Abstract The perovskite La2/3Sr1/3MnO3 (LSMO)-based heterostructures have attracted
considerable interest for their potential applications in oxide spintronics, topological …

Electrically driven magnetic switching (EDMS) is highly demanded for next-generation
advanced memories or spintronic devices. The key challenge is to achieve repeatable and …

For next-generation technology, magnetic systems are of interest due to the natural ability to
store information and, through spin transport, propagate this information for logic functions …