Crystalline silicon (c-Si) is the dominating photovoltaic technology today, with a global
market share of about 90%. Therefore, it is crucial for further improving the performance of c …

Silicon Dioxide is a pleasant material with a wide range of application in semiconductor
devices. Ago days silicon solar panels utilized to exist readily precious as veritably high …

Specific contact resistance, commonly extracted by Cox and Strack method (CSM) and
transfer length method (TLM), is one of the most important properties of carrier-selective …

Excellent silicon surface passivation is achieved by atomic layer deposition (ALD) grown
hafnium oxide (HfO x) films on silicon surfaces (both n-type and p-type). It is inferred from the …

Silicon/compound heterojunction (SCH) solar cells based on p-type and n-type c-Si wafers
using atom layer deposition-TiO 2 and low work function metal as the electron transport …

The microstructure and optical properties of TiO 2 thin films, prepared by the sol-gel dip
coating technique on glass substrates, were inspected. After deposition, the films were …

Develo** a vacuum-free and low-temperature deposition technique for dopant-free carrier-
selective materials without sacrificing their performance can reduce the fabrication cost and …

Excellent silicon surface passivation is demonstrated by the HfOx film deposited using
optimized atomic layer deposition (ALD) process. For pristine films, surface recombination …

Recently, titanium oxide has been widely investigated as a carrier-selective contact material
for silicon solar cells. Herein, titanium oxide films were fabricated via simple deposition …

In the present study, Titanium dioxide silicon heterojunction (TiO2–SHJ) solar cell, TiO2/i–a–
Si: H/p–c–Si, has been studied using AFORS-HET numerical simulation software. The …