Crystal defects play an important role in the degradation and failure of semiconductor
materials and devices. Direct determination of band gap of defects is a critical step for …

During the past decades, group-III nitrides have emerged as a new impetus for the
development of semiconductor industry and attracted significant attentions in different fields …

The early stage of heteroepitaxial growth of wurtzite III-nitrides on lattice-mismatched
substrates produces epitaxial strain that is relieved by nucleating a network of misfit …

InAlN as a functional inorganic material is a promising alternative to the commonly used
InGaN in tunnel diodes and optoelectronic devices, due to its tunable wider range of energy …

In this work, we have investigated the non‐intentional incorporation of gallium in InAlN
layers grown by metal organic vapor phase epitaxy (MOVPE) using two reactors. Atomic …

Abstract Two AlInN/AlN/GaN heterostructures with 280-nm-and 400-nm-thick AlN buffer
grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD) have …

Structural and electrical properties of a-and a+ c-type threading dislocations in metal-
organic vapor-phase epitaxy-grown Si-doped Ga N (0001) are determined by combining …

Surface structural, electronic and electrical properties of the quaternary alloy AlInGaN/GaN
heterostructures are investigated. Surface termination, atomic arrangement, electronic and …

A simple model that establishes a quantitative measure for the positional correlation degree
of threading dislocations (TDs) in heteroepitaxial layers is proposed. Accordingly, analyzing …

Prismatic stacking fault (PSF) is a common and important lattice defect in wurtzite nitrides.
This work reports unusual nano-sized hexagonal-shaped domains in AlN films grown on …