Tri-gate heterojunction SOI Ge-FinFETs
This paper proposes structures of tri-gate heterojunction (HJ) FinFETs with different
configuration of gate dielectric and gate material stacks: Single Gate Material Single …
configuration of gate dielectric and gate material stacks: Single Gate Material Single …
A 250 MHz-to-1.6 GHz Phase Locked Loop Design in Hybrid FinFET-Memristor Technology
NO Adesina, A Srivastava - 2020 11th IEEE Annual Ubiquitous …, 2020 - ieeexplore.ieee.org
There are tremendous improvements in performance of transistor in CMOS technology by
scaling down its size. However, there are various challenges, such as short channel effects …
scaling down its size. However, there are various challenges, such as short channel effects …
Process variation analysis and optimization of a FinFET-based VCO
Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS for
nanoscale technologies. In this paper, the viability of a mixed-signal design for FinFET …
nanoscale technologies. In this paper, the viability of a mixed-signal design for FinFET …
Incorporating manufacturing process variation awareness in fast design optimization of nanoscale CMOS VCOs
This paper proposes a novel fast and unified mixed-signal design methodology by
incorporating manufacturing process variation awareness in power, performance, and …
incorporating manufacturing process variation awareness in power, performance, and …
Study of finfet transistor. Critical and literature review in finfet transistor in the active filter
For several decades, the development of metal-oxide-semiconductor field-effect transistors
have made available to us better circuit time and efficiency per function with each …
have made available to us better circuit time and efficiency per function with each …
[PDF][PDF] STUDY OF FINFET TRANSISTOR: CRITICAL AND LITERATURE REVIEW IN FINFET TRANSISTOR IN THE ACTIVE FILTER
For several decades, the development of metal-oxide-semiconductor field-effect transistors
have made available to us better circuit time and efficiency per function with each …
have made available to us better circuit time and efficiency per function with each …
Spice modeling of oxide and interface trapped charge effects in fully-depleted double-gate FinFETs
As is the case with conventional planar MOS transistors, the electrical characteristics of
highly-scaled multi-gate field-effect transistors (FinFETs) also suffer from temporal …
highly-scaled multi-gate field-effect transistors (FinFETs) also suffer from temporal …
Ultra low power DG FinFET based voltage controlled oscillator circuits
RA Walunj, SD Pable, GK Kharate - International Journal of …, 2019 - Taylor & Francis
Voltage-controlled oscillator (VCO) significantly influences power and performance in many
analog and digital applications. In this era of portable electronics, power consumption has …
analog and digital applications. In this era of portable electronics, power consumption has …
Electrical parameter analysis of gate-extension on source of germanium tri-gate FinFET
This paper presents the impact of geometrical and the electrical parameters such as the
concentration in channel region, variation of temperature, drain potential, gate work function …
concentration in channel region, variation of temperature, drain potential, gate work function …
Dual stacked gate dielectric source/oxide overlap Si/Ge FinFETs: Proposal and analysis
This paper proposes structures of two different FinFETs with conventional FinFET for
different configuration of fin material and the orientation of the gate dielectrics over the …
different configuration of fin material and the orientation of the gate dielectrics over the …