Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing
various applications in lighting, displays, biotechnology, and other fields. However, their …

We propose the Zn2V (1–x) Nb x N3 alloy as a new promising material for optoelectronic
applications, in particular for light-emitting diodes (LEDs). We perform accurate electronic …

High-power optical transmission (HPOT) enables the uninterrupted transfer of power in the
order of hundreds of watts over several kilometers, freeing power systems from traditional …

Co-do** of Mg into chemically stable TiO 2 thin film is attractive for deep UV detection. In
this report, we have fabricated∼ 110 nm undoped TiO 2 thin film and Mg doped TiO 2 thin …

Abstract Electronic properties of Cs 2 (Ti, Zr, Hf) X 6, where X= I, Br, and Cl in vacancy-
ordered double perovskite (VODP) structure were studied by using the density functional …

In x Ga 1-x N/GaN solar cells are ideal candidates for use in extreme temperature
applications. The conversion efficiency potential of double heterostructure solar cells was …

We report on the achievement of uniform red color InGaN/AlGaN nanowire light-emitting
diodes (LEDs) grown on n-type Si (111) by molecular beam epitaxy technique via anodic …

The emergence of III‐nitride semiconductors has established a solid foundation for the
development of high‐efficiency optoelectronic devices, particularly for light‐emitting diodes …

A strong polarization electric field (PEF) in III‐nitride semiconductors has adverse effects on
the performance of III‐N light‐emitting diodes (LEDs). However, to reduce the PEF of III‐N …

In this work, n-Type ZnO nanorods (NRs) were grown on a p-type Si (100) substrate using
the hydrothermal technique. These pn heterojunctions were made to fabricate ZnO-based …