The layered, air-stable van der Waals antiferromagnetic compound CrSBr exhibits
pronounced coupling among its optical, electronic, and magnetic properties. As an example …

This study investigates the electronic band structure of chromium sulfur bromide (CrSBr)
through comprehensive photoluminescence (PL) characterization. We clearly identify low …

AlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal
organic chemical vapor deposition. The grains are observed to have strong excitonic …

Charge-carrier confinement in nanoscale In-rich agglomerations within a lateral InGaAs
quantum well (QW) formed from stacked submonolayers (SMLs) of InAs in GaAs is studied …

The study investigates the anion exchange mechanism between the ad-atoms of arsenic
and phosphorus followed by their inter-diffusion processes, in InAsP/InP hetero-structures …

Semiconductor nanowires have been identified as a viable technology for next-generation
infrared (IR) photodetectors with improved detectivity and detection across a range of …

Influence of barrier material and structure on carrier quantum confinement in GaAsBi
quantum wells (QWs) is studied comprehensively. Single-and multi-QW structures were …

The performance of devices made from III-V compound semiconductors relies heavily on
their surface and interface properties. The InAsP/InP material system is recently gaining …

A photoluminescence (PL) spectroscopy study of the bulk quaternary alloy InAlAsSb is
presented. Samples were grown lattice-matched to InP by molecular beam epitaxy and two …

The effect of the GaAsP strain-compensating layer on type-II GaAs 1− x Sb x/In y Ga 1− y As
was investigated. GaAsSb/InGaAs multiple quantum wells (MQWs) without and with GaAsP …