The first organic transistors on plastic substrates were reported in 1990, providing an early
hint of the possibilities offered by plastic electronics. These devices used vacuumevaporated …

This review outlines developments in the growth of crystalline oxides on the ubiquitous
silicon semiconductor platform. The overall goal of this endeavor is the integration of …

CMOS utilizing high-mobility III–V/Ge channels on Si substrates is expected to be one of the
promising devices for high-performance and low power advanced LSIs in the future …

The need for high-κ gate dielectrics and metal gates in advanced integrated circuits has
reopened the door to Ge and III–V compounds as potential replacements for silicon …

Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si do**
levels, were grown at 650 C by organometallic vapor phase epitaxy on Ge substrates and …

HIGHLIGHTS We have successfully synthesized Ge NPs in acetone using pulsed laser
ablation. The average size of NPs is found to decrease with the increase in laser pulse …

Formation process of Ge-on-insulator (GOI) layers by Ge condensation with very high purity
of Ge is clarified in terms of diffusion behaviors of Si and Ge in a SiGe layer. It is shown that …

We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a
200nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging …

Germanium on insulator on silicon substrates can be obtained by the growth of a SiGe layer
on silicon on insulator followed by a condensation at high temperature and a Ge epitaxial …

We have grown for the first time (001)-oriented Germanium on (001) Si by using a perovskite
oxide as an insulating epitaxial template. The full structures were grown by molecular beam …