Recommended methods to study resistive switching devices

M Lanza, HSP Wong, E Pop, D Ielmini… - Advanced Electronic …, 2019 - Wiley Online Library
Resistive switching (RS) is an interesting property shown by some materials systems that,
especially during the last decade, has gained a lot of interest for the fabrication of electronic …

Piezoelectric response of multi-walled carbon nanotubes

MV Il'ina, OI Il'in, YF Blinov, AA Konshin, BG Konoplev… - Materials, 2018 - mdpi.com
Recent studies in nanopiezotronics have indicated that strained graphene may exhibit
abnormal flexoelectric and piezoelectric properties. Similar assumptions have been made …

Memristive switching mechanism of vertically aligned carbon nanotubes

MV Il'ina, OI Il'in, YF Blinov, VA Smirnov… - Carbon, 2017 - Elsevier
This paper proposes a memristive switching mechanism of an individual vertically aligned
carbon nanotube related to the formation and subsequent redistribution of non-uniform …

Carbon nanowalls: A new material for resistive switching memory devices

P Russo, M **ao, NY Zhou - Carbon, 2017 - Elsevier
In this work, we report for the first time the resistive switching behavior of a new type of
device made of carbon nanowalls (CNWs) deposited on fluorine-doped tin oxide (FTO) …

Anomalous piezoelectricity and conductivity in aligned carbon nanotubes

MV Il'ina, OI Il'in, AV Guryanov, OI Osotova… - Journal of Materials …, 2021 - pubs.rsc.org
Aligned carbon nanotubes (CNTs) are among the most promising nanostructures in
nanoelectronics. However, at the moment, CNTs have not received wide practical …

On the issue of neutralizing carbon dioxide at processing coal in boilers of thermal power plants

B Dikhanbaev, A Dikhanbaev, M Koshumbayev… - Energy, 2024 - Elsevier
The aim of the work is to predict 100% decarbonization of power plant's flue gases; to
recover carbon from CO 2 in in-situ mode; to extract valuable metals from ash; and to …

Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices

Y Yang, Y Takahashi, A Tsurumaki-Fukuchi… - Journal of …, 2017 - Springer
Memristors or memristive devices are two-terminal nanoionic systems whose resistance
switching effects are induced by ion transport and redox reactions in confined spaces down …

Resistive switching of vertically aligned carbon nanotube by a compressive strain

MV Ilina, YF Blinov, OI Ilin, VS Klimin… - … Conference on Micro …, 2016 - spiedigitallibrary.org
The resistive switching of vertically aligned carbon nanotube (VA CNT) by the action of a
compressive strain is shown. The memory cell based on compressed VA CNT has been …

Investigation of resistive switching of ZnxTiyHfzOi nanocomposite for RRAM elements manufacturing

RV Tominov, EG Zamburg, DA Khakhulin… - Journal of Physics …, 2017 - iopscience.iop.org
The resistive switching effect in Zn x Ti y Hf z O i nanocomposite film, grown by pulsed laser
deposition technique, was investigated. It was shown that Zn x Ti y Hf z O i film surface had a …

Resistive switching characteristic improvement in a single-walled carbon nanotube random network embedded hydrogen silsesquioxane thin films for flexible …

SY Min, WJ Cho - International Journal of Molecular Sciences, 2021 - mdpi.com
In this study, we evaluated the improved memristive switching characteristics of hydrogen
silsesquioxane (HSQ) nanocomposites embedded with a single-walled carbon nanotube …