Selective area regrowth and do** for vertical gallium nitride power devices: Materials challenges and recent progress
This paper reviews materials challenges and recent progress for selective area regrowth
and do** for vertical gallium nitride (GaN) power devices. The purpose is to realize …
and do** for vertical gallium nitride (GaN) power devices. The purpose is to realize …
Improvement of channel property of GaN vertical trench MOSFET by compensating nitrogen vacancies with nitrogen plasma treatment
T Ishida, KP Nam, M Matys, T Uesugi… - Applied Physics …, 2020 - iopscience.iop.org
The electrical properties of vertical GaN trench MOSFETs without drift layers were evaluated
to investigate the effect of nitrogen plasma treatment on the trench sidewalls. It is …
to investigate the effect of nitrogen plasma treatment on the trench sidewalls. It is …
Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors
In this Letter, we report selective epitaxial growth of monolithically integrated GaN-based
light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility transistor (HEMT) …
light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility transistor (HEMT) …
Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching
T Kumabe, Y Ando, H Watanabe, M Deki… - Japanese Journal of …, 2021 - iopscience.iop.org
Inductively coupled plasma–reactive ion etching (ICP–RIE)-induced damage in heavily Mg-
doped p-type GaN ([Mg]= 2× 10 19 cm− 3) was investigated by low-temperature …
doped p-type GaN ([Mg]= 2× 10 19 cm− 3) was investigated by low-temperature …
Direct measurement of band offset at the interface between CdS and Cu2ZnSnS4 using hard X-ray photoelectron spectroscopy
We directly and non-destructively measured the valence band offset at the interface between
CdS and Cu 2 ZnSnS 4 (CZTS) using hard X-ray photoelectron spectroscopy (HAXPES) …
CdS and Cu 2 ZnSnS 4 (CZTS) using hard X-ray photoelectron spectroscopy (HAXPES) …