Next-generation mid-infrared sources
The mid-infrared (mid-IR) is a wavelength range with a variety of technologically vital
applications in molecular sensing, security and defense, energy conservation, and …
applications in molecular sensing, security and defense, energy conservation, and …
Emerging type‐II superlattices of InAs/InAsSb and InAs/GaSb for mid‐wavelength infrared photodetectors
Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for
environmental sensing of hazardous gases, security, defense, and medical applications …
environmental sensing of hazardous gases, security, defense, and medical applications …
[BUCH][B] Infrared and terahertz detectors
A Rogalski - 2019 - books.google.com
This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of
infrared and terahertz detector technology, from fundamental science to materials and …
infrared and terahertz detector technology, from fundamental science to materials and …
InAsSb-based infrared photodetectors: Thirty years later on
In 1989, one author of this paper (AR) published the very first review paper on InAsSb
infrared detectors. During the last thirty years, many scientific breakthroughs and …
infrared detectors. During the last thirty years, many scientific breakthroughs and …
InAs/GaSb Type‐II Superlattice Detectors
EA Plis - Advances in Electronics, 2014 - Wiley Online Library
InAs/(In, Ga) Sb type‐II strained layer superlattices (T2SLs) have made significant progress
since they were first proposed as an infrared (IR) sensing material more than three decades …
since they were first proposed as an infrared (IR) sensing material more than three decades …
High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection
Very long wavelength infrared photodetectors based on InAs/InAsSb type-II superlattices are
demonstrated on GaSb substrate. A heterostructure photodiode was grown with 50% cut-off …
demonstrated on GaSb substrate. A heterostructure photodiode was grown with 50% cut-off …
[HTML][HTML] Comparison of type II superlattice InAs/InAsSb barrier detectors operating in the mid-wave infrared range
Four types of barrier detectors based on a type II InAs/InAsSb superlattice with a wide-gap
barrier made of a solid AlInAsSb lattice matched to the GaSb buffer were compared. The …
barrier made of a solid AlInAsSb lattice matched to the GaSb buffer were compared. The …
High quantum efficiency mid-wavelength infrared type-II InAs/InAs1− xSbx superlattice photodiodes grown by metal-organic chemical vapor deposition
We report the growth and characterization of mid-wavelength infrared type-II InAs/InAs 1− x
Sb x superlattice photodiodes on GaSb substrates grown by metal-organic chemical vapor …
Sb x superlattice photodiodes on GaSb substrates grown by metal-organic chemical vapor …
Influence of the period thickness and composition on the electro-optical properties of type-II InAs/GaSb midwave infrared superlattice photodetectors
In this paper, the electro-optical properties of InAs/GaSb superlattice (SL) midwave infrared
photodiodes with different periods were investigated. Three devices with different SL …
photodiodes with different periods were investigated. Three devices with different SL …
Midwavelength interband cascade infrared photodetectors with superlattice absorbers and gain
We report on a comparison study of the electrical and optical properties of a set of device
structures with different numbers of cascade stages, type-II superlattice (T2SL) absorber …
structures with different numbers of cascade stages, type-II superlattice (T2SL) absorber …