Broadband photodetectors (PDs) have garnered significant attention due to their ability to
detect optical signals across a wide wavelength range, with applications spanning military …

Multiple-stage interband cascade infrared photodetector (ICIP) is a new class of
semiconductor infrared photodetector that exhibits improved device performance in terms of …

Abstract Type-II superlattice (T2SL) materials are the key element for infrared (IR) detectors.
However, it is well known that the characteristics of the detectors with the T2SL layer are …

To determine the interfacial atomic intermixing of the InAs/GaSb T2SL, an innovative and
straightforward method based on TEM techniques is proposed to analysize and investigate …

We show that Sb substitution for As in a MBE grown InAs/InAsSb strained layer superlattice
(SLS) is accompanied by significant strain fluctuations. The SLS was observed using …

We performed pseudopotential based density functional theory (DFT) calculations for
GaSb/InAs type II superlattices (T2SLs), with bandgap errors from the local density …

We report on a direct measurement of cation and anion sub-lattice strain in an InAs/GaSb
type-II strained layer superlattice (T2SLs) using atomic resolution imaging and advanced …

High-angle annular dark-field (HAADF) and electron energy loss spectroscopy in a Cs-
corrected scanning transmission electron microscope were utilized for characterizing the …

Unusual specular X-ray diffraction patterns have been observed from certain thin film
intergrowths of metal monochalcogenide (MX) and transition metal dichalcogenide (TX 2) …

We have used the envelope function formalism (EFF) to investigate the bands structure,
energy subbands and carrier's effective mass in the growth direction and in-plan of InAs (d …