In heavily n-doped graphene, when pushing the Fermi level to the vicinity of the Van Hove
singularity, exotic electronic ground states are expected to occur driven by many-body …

Do** graphene near the 1/4-filling to shift the extended flat band and van Hove singularity
below EF has been highly desirable. Here we report the experimental observation of an …

A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in
the electronic system and can drive phase transitions. Here we show that the flat band in …

The occupied electron energy bands of monolayer MoS 2 are composed from out-of-plane d
orbitals at the Brillouin zone (BZ) center and from in-plane d orbitals at the BZ corner. If a …

Herewith, we propose a comprehensive study of the vibrational response of chemical
do** of free-standing graphene (Gr). Complementary insights on the increased metallicity …

Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic
effects and hold promise for optical and optoelectronic applications. Yet, electron do** of …

We report on the observation of photoluminescence (PL) with a narrow 18 meV peak width
from molecular beam epitaxy grown on graphene/Ir (1 1 1). This observation is explained in …

Experimental setups for charge transport measurements are typically not compatible with the
ultrahigh vacuum conditions for chemical do**, limiting the charge carrier density that can …

Here, using the ultrafast optical pump-probe spectroscopy, we have studied the
quasiparticle dynamics in the type-II Dirac semimetal NiTe 2. Anomalous dynamic optical …

We report the observation of graphene doped up to the Lifshitz transition obtained solely by
the intercalation of Erbium atoms. ARPES measurements show that a wide flat band is …