The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …

Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Scaling down the size of field-effect transistors in integrated circuits leads to higher speed,
lower power consumption and increased integration density, but also results in short …

The success of silicon as a dominant semiconductor technology has been enabled by its
moderate band gap (1.1 eV), permitting low-voltage operation at reduced leakage current …

Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential
self-terminating gas–solid reactions, has for about four decades been applied for …

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage …

The scaling of complementary metal oxide semiconductor transistors has led to the silicon
dioxide layer, used as a gate dielectric, being so thin (1.4 nm) that its leakage current is too …

New materials, namely high‐k (high‐permittivity) dielectrics to replace SiO2, Cu to replace
Al, and barrier materials for Cu, are revolutionizing modern integrated circuits. These …

Crystalline structures, zone-center phonon modes, and the related dielectric response of the
three low-pressure phases of HfO 2 have been investigated in density-functional theory …

This paper focuses on approaches to continuing CMOS scaling by introducing new device
structures and new materials. Starting from an analysis of the sources of improvements in …