Heavy‐metal‐free III–V colloidal quantum dots (QDs) exhibit promising attributes for
application in optoelectronics. Among them, InAs QDs are demonstrating excellent optical …

In order to advance the development of quantum emitter‐based devices, it is essential to
enhance light‐matter interactions through coupling between semiconductor quantum dots …

Mid-infrared HgTe colloidal quantum dot electroluminescent devices are demonstrated. With
emission at 4 μm, devices achieved an external quantum efficiency of∼ 10–3 and power …

A large volume, scalable synthesis procedure of HgTe quantum dots (QDs) capped initially
with short‐chain conductive ligands ensures ligand exchange‐free and simple device …

The mid-wave infrared (MWIR), ranging from 2 to 5 micrometers, is of substantial interest for
chemical sensing, imaging, and spectroscopy. Black phosphorus (bP)–based MWIR light …

Thanks to their narrow band gap nature and fairly high carrier mobility, HgTe nanocrystals
(NCs) are of utmost interest for optoelectronics beyond the telecom window (λ> 1.55 μm). In …

Cadmium mercury selenide (CdHgSe) nanocrystals exhibit a unique combination of low‐
energy optical absorption and emission, which can be tuned from the visible to the infrared …

Short-wave infrared (SWIR) light-emitting diodes (LEDs) have emerged as promising
technologies for diverse applications such as optical communication, biomedical imaging …

Optoelectronic devices rely on conductive layers as electrodes, but they usually introduce
optical losses that are detrimental to the device performances. While the use of transparent …

HgTe nanocrystals are one of the most promising candidates for optoelectronic applications
in short-and middle-range infrared wavelength regions. Fabrication of one-dimensional …