We review recent progress in the growth and characterization of Si 1− x Ge x islands and Ge
dots on (001) Si. We discuss the evolution of the island morphology with Si 1− x Ge x …

Self-assembled nanostructures, such as quantum dots (QDs), quantum rings (QRs) and
nanowires (NWs), have been extensively studied because of their physical properties and …

From observations of self-assembly of Ge quantum dots directed by substrate morphology,
we propose the concept of control of ordering in heteroepitaxy by a local strain-mediated …

Two-dimensional (2D) periodic arrays of Ge islands were realized on prepatterned Si (001)
substrates by solid-source molecular-beam epitaxy. Atomic-force microscopy images …

The capability of placing individual nanoscale building blocks on exact substrate locations in
a controlled manner is one of the key requirements to realize future electronic, optical, and …

We develop a theoretical model to elucidate the nucleation of strained islands on patterned
substrates. We show that island nucleation is directed to the preferred sites by a much lower …

Self-assembled Ge islands were grown on stripe-patterned Si001 substrates by solid source
molecular beam epitaxy. The surface morphology obtained by atomic force microscopy and …

Silica nanoparticles linked through ionic liquid-like molecules are synthesized by two routes.
The first approach utilized a bis (trialkoxysilyl)-substituted imidazolium iodide to link the …

Ordered arrays of Ge quantum dot groups (QDs) were grown on pit-patterned silicon-on-
insulator (SOI) substrates with deep pits, prepared by electron beam lithography (EBL) and …

Ge deposition on Si (001) substrates patterned by focused ion beams is a promising route
toward fabricating highly ordered quantum dots. Depending on the growth temperature T …