We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based
electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors …

The integration of living cells together with silicon field-effect devices challenges a new
generation of biosensors and bioelectronic devices. Cells are representing highly organised …

The properties of GaN have made it not only an ideal material for high power and high
frequency electronic devices, but also a semiconductor suitable for application in biosensing …

We use a Wiener deconvolution filter to deblur the streak image of streak tube imaging lidar
to improve the spatial resolution of the system and reduce the edge blurring effect in point …

There is an increasing interest in the integration of hybrid bio-semiconductor systems for the
non-invasive evaluation of physiological parameters. High quality gallium nitride and its …