Vertical gallium nitride (GaN) power devices have attracted increased attention due to their
superior high-voltage and high-current capacity as well as easier thermal management than …

REVIEW High-efficiency light-emitting diodes emitting amber, green, blue, and ultraviolet
light have been obtained through the use of an InGaN active layer instead of a GaN active …

Carrier concentration profiles of two-dimensional electron gases are investigated in wurtzite,
Ga-face Al x Ga 1− x N/GaN/Al x Ga 1− x N and N-face GaN/Al x Ga 1− x N/GaN …

Two dimensional electron gases in Al x Ga 1− x N/GaN based heterostructures, suitable for
high electron mobility transistors, are induced by strong polarization effects. The sheet …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …

The wet etching of GaN, AlN, and SiC is reviewed including conventional etching in
aqueous solutions, electrochemical etching in electrolytes and defect-selective chemical …

Abstract Development of Si photonic integrated circuits (PICs) has been impeded due to lack
of efficient Si-based light-emitting sources. Because of their indirect bandgap, bulk Ge and …

A multistep pulsed-laser deposition (PLD) process is presented for epitaxial, nominally
undoped ZnO thin films of total thickness of 1 to 2 μm on c-plane sapphire substrates. We …

This Perspective seeks to understand and assess why ultrawide bandgap (UWBG)
semiconductor-based deep-UV photodetectors have not yet found any noticeable presence …