In this article, the performance of 3-D nanosheet FET (NS-FET) in inversion (INV) and
junctionless (JL) modes is demonstrated and compared at both device and circuit levels. In …

The junctionless transistor consists of a piece of uniformly doped semiconductor with a gate
placed between the source and drain contacts and is, therefore, the simplest transistor …

The non-planar 3D structure of multi-gate FinFETs makes them able to be scaled down to 20
nm and beyond and also have greater performance. But any variation of the fin cross …

This paper reports a comparative study of the analog performance, linearity and harmonic
distortion characteristics between junctionless (JL) and conventional silicon-on-insulator …

This paper proposes a p-type double gate junctionless field effect transistor having opposite
do** in the core with that of the silicon body referring to rectangular core–shell (RCS) …

A Rectangular core-shell (RCS) is analyzed on vertically stacked gate oxide junctionless
nanosheet along with do** and gate/dielectric engineering. This paper also proposes an …

In this paper, for the first time, the performance of 3D Nanosheet FETs (NSFETs) is reported
in the inversion (INV), accumulation (ACC), and junctionless (JL) modes at elevated …

In the present work Dielectric Modulation (DM) technique along with Triple Metal (TM) gate
engineering has been used for the junctionless (JL) cylindrical gate all around (CGAA) Si …

Moore's law, along with the International Roadmap for Devices and Systems, continues to
guide the scaling of devices below 10 nm. The challenges posed by such small …

At the sub-22 nm technology node, junctionless FinFETs are regarded as advantageous
alternatives for conventional FinFET due to their simpler fabrication and uniform do** …