Metal–insulator transition (MIT) coupled with an ultrafast, significant, and reversible resistive
change in Mott insulators has attracted tremendous interest for investigation into next …

A memristor can comprehensively emulate the neural components rather than imitating a
single characteristic superficially due to its analog and hysteretic resistive switching. Bio …

The crossbar array-based resistive memory is considered a potential architecture for high-
density nonvolatile memory applications. However, the sneak current path problem …

Phase-change materials (PCMs) and metal-insulator transition (MIT) materials have the
unique feature of changing their material phase through external excitations such as …

Vanadium dioxide is one of the most studied strongly correlated materials. Nonetheless, the
intertwining between electronic correlation and lattice effects has precluded a …

Recent reports have identified new metaphases of VO 2 with strain and/or do**,
suggesting the structural phase transition and the metal-to-insulator transition might be …

Traditionally, the Coulomb repulsion or Peierls instability causes the metal-insulator phase
transitions in strongly correlated quantum materials. In comparison, magnetic stress is …

Negative differential resistance (NDR) characteristic in NbO2-based memristors endows
them with the role of selectors, steep-slope transistors, or artificial neurons. However, the …

The approaching end of Moore's law scaling has significantly accelerated multiple fields of
research including neuromorphic-, quantum-, and photonic computing, each of which …

The metal to insulator transition of NbO2 has been predicted to be a result of a structural
phase transition (SPT) governed by Peierls physics. However, direct observation of the SPT …