Influence of co-sputtering AlB2 to TaB2 on stoichiometry of non-reactively sputtered boride thin films
Transition metal diboride thin films are promising functional materials for their outstanding
mechanical properties and thermal stability. By combining experiment and simulations, we …
mechanical properties and thermal stability. By combining experiment and simulations, we …
[HTML][HTML] Growth and stability of epitaxial zirconium diboride thin films on silicon (111) substrate
The epitaxial growth of boron rich hexagonal zirconium diborides (h-ZrB 2+ δ) thin films on
Si (111) substrates using the magnetron co-sputtering technique with elemental zirconium …
Si (111) substrates using the magnetron co-sputtering technique with elemental zirconium …
Epitaxial Growth of Magnetron‐Sputtered ZrB2 Films on Si(100) Substrates
Epitaxial growth of ZrB2 films on Si (100) substrates at 900° C is demonstrated using direct‐
current magnetron sputter deposition from sintered ZrB2 targets. This case of epitaxial …
current magnetron sputter deposition from sintered ZrB2 targets. This case of epitaxial …
Epitaxial thin films of group 4 transition metal diborides
C Schnitter - 2023 - diva-portal.org
Group 4 transition metal diboride films were deposited epitaxially onto different substrates,
typically at 900 C, using direct-current magnetron sputtering from compound targets of ZrB2 …
typically at 900 C, using direct-current magnetron sputtering from compound targets of ZrB2 …