Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …

This paper explores how the Schottky barrier (SB) transistor is used in a variety of
applications and material systems. A discussion of SB formation, current transport …

Although carbon nanotube (CNT) transistors have been promoted for years as a
replacement for silicon technology, there is limited theoretical work and no experimental …

The slow-down in traditional silicon complementary metal-oxide–semiconductor (CMOS)
scaling (Moore's law) has created an opportunity for a disruptive innovation to bring the …

Carbon nanotube field-effect transistors are strong candidates in replacing or supplementing
silicon technology. Although theoretical studies have projected that nanotube transistors will …

Single-wall carbon nanotube field-effect transistors (CNFETs) have been shown to behave
as Schottky barrier (SB) devices. It is not clear, however, what factors control the SB size …

In this article, we study the properties of metal contacts to single-layer molybdenum disulfide
(MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On …

State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky-
barrier-modulated transistors. It is known that vertical scaling of the gate oxide significantly …

In this letter, the ambipolar transport properties of graphene flakes have been used to
fabricate full-wave signal rectifiers and frequency-doubling devices. By correctly biasing an …

Multivalued logic has always attracted the attention of digital system and logic designers.
However, the high-performance and low-power CMOS process, which has been developed …