[HTML][HTML] Unveiling the structural origin to control resistance drift in phase-change memory materials

W Zhang, E Ma - Materials Today, 2020 - Elsevier
The global demand for data storage and processing is increasing exponentially. To deal
with this challenge, massive efforts have been devoted to the development of advanced …

Design rules for phase‐change materials in data storage applications

D Lencer, M Salinga, M Wuttig - Advanced Materials, 2011 - Wiley Online Library
Phase‐change materials can rapidly and reversibly be switched between an amorphous
and a crystalline phase. Since both phases are characterized by very different optical and …

[HTML][HTML] CP2K: An electronic structure and molecular dynamics software package-Quickstep: Efficient and accurate electronic structure calculations

TD Kühne, M Iannuzzi, M Del Ben, VV Rybkin… - The Journal of …, 2020 - pubs.aip.org
CP2K is an open source electronic structure and molecular dynamics software package to
perform atomistic simulations of solid-state, liquid, molecular, and biological systems. It is …

Device-scale atomistic modelling of phase-change memory materials

Y Zhou, W Zhang, E Ma, VL Deringer - Nature Electronics, 2023 - nature.com
Computer simulations can play a central role in the understanding of phase-change
materials and the development of advanced memory technologies. However, direct quantum …

High‐throughput screening for phase‐change memory materials

YT Liu, XB Li, H Zheng, NK Chen… - Advanced Functional …, 2021 - Wiley Online Library
Phase change memory (PCM) is an emerging non‐volatile data storage technology
concerned by the semiconductor industry. To improve the performances, previous efforts …

Tailoring Mid‐Gap States of Chalcogenide Glass by Pressure‐Induced Hypervalent Bonding Towards the Design of Electrical Switching Materials

M Xu, Q Xu, R Gu, S Wang, CZ Wang… - Advanced Functional …, 2023 - Wiley Online Library
Phase change memory (PCM) and ovonic threshold switching (OTS) materials using
chalcogenide glass are essential elements in advanced 3D memory chips. The mid‐gap …

Neural network interatomic potential for the phase change material GeTe

GC Sosso, G Miceli, S Caravati, J Behler… - Physical Review B …, 2012 - APS
GeTe is a prototypical phase change material of high interest for applications in optical and
electronic nonvolatile memories. We present an interatomic potential for the bulk phases of …

Revealing the intrinsic nature of the mid-gap defects in amorphous Ge2Sb2Te5

K Konstantinou, FC Mocanu, TH Lee… - Nature …, 2019 - nature.com
Understanding the relation between the time-dependent resistance drift in the amorphous
state of phase-change materials and the localised states in the band gap of the glass is …

Bonding origin of optical contrast in phase-change memory materials

B Huang, J Robertson - Physical Review B—Condensed Matter and Materials …, 2010 - APS
The large optical contrast between crystalline and amorphous phases of phase change
memory materials is shown to arise from a large difference in the optical matrix elements …

Time-domain separation of optical properties from structural transitions in resonantly bonded materials

L Waldecker, TA Miller, M Rudé, R Bertoni, J Osmond… - Nature materials, 2015 - nature.com
The extreme electro-optical contrast between crystalline and amorphous states in phase-
change materials is routinely exploited in optical data storage and future applications …