[HTML][HTML] Recent progress on 2D magnets: Fundamental mechanism, structural design and modification

X Jiang, Q Liu, J **ng, N Liu, Y Guo, Z Liu… - Applied Physics …, 2021 - pubs.aip.org
ABSTRACT The two-dimensional (2D) magnet, a long-standing missing member in the
family of 2D functional materials, is promising for nextgeneration information technology …

Introduction to spin wave computing

A Mahmoud, F Ciubotaru, F Vanderveken… - Journal of Applied …, 2020 - pubs.aip.org
This paper provides a tutorial overview over recent vigorous efforts to develop computing
systems based on spin waves instead of charges and voltages. Spin-wave computing can …

[HTML][HTML] Twist-assisted all-antiferromagnetic tunnel junction in the atomic limit

Y Chen, K Samanta, NA Shahed, H Zhang, C Fang… - Nature, 2024 - nature.com
Antiferromagnetic spintronics, shows great potential for high-density and ultrafast
information devices. Magnetic tunnel junctions (MTJs), a key spintronic memory component …

A coronene-based semiconducting two-dimensional metal-organic framework with ferromagnetic behavior

R Dong, Z Zhang, DC Tranca, S Zhou, M Wang… - Nature …, 2018 - nature.com
Metal–organic frameworks (MOFs) have so far been highlighted for their potential roles in
catalysis, gas storage and separation. However, the realization of high electrical conductivity …

Spin-momentum-locked edge mode for topological vortex lasing

ZQ Yang, ZK Shao, HZ Chen, XR Mao, RM Ma - Physical review letters, 2020 - APS
Spin-momentum locking is a direct consequence of bulk topological order and provides a
basic concept to control a carrier's spin and charge flow for new exotic phenomena in …

Ferroelectric control of the spin texture in GeTe

C Rinaldi, S Varotto, M Asa, J Sławińska, J Fujii… - Nano …, 2018 - ACS Publications
The electric and nonvolatile control of the spin texture in semiconductors would represent a
fundamental step toward novel electronic devices combining memory and computing …

[HTML][HTML] Advances and key technologies in magnetoresistive sensors with high thermal stabilities and low field detectivities

B Lim, M Mahfoud, PT Das, T Jeon, C Jeon, M Kim… - APL Materials, 2022 - pubs.aip.org
Advances in micro-and nanotechnology have led to rapid employment of spintronic sensors
in both recording and non-recording applications. These state-of-the-art magnetoresistive …

Spin-charge interconversion in heterostructures based on group-IV semiconductors

F Bottegoni, C Zucchetti, G Isella, M Bollani… - La Rivista del Nuovo …, 2020 - Springer
Spin-charge interconversion phenomena are ubiquitous in solid-state physics and represent
a powerful tool to investigate spin transport in metals, semiconductors and …

Spin Hall effect in prototype Rashba ferroelectrics GeTe and SnTe

H Wang, P Gopal, S Picozzi, S Curtarolo… - npj Computational …, 2020 - nature.com
Abstract Ferroelectric Rashba semiconductors (FERSCs) have recently emerged as a
promising class of spintronics materials. The peculiar coupling between spin and polar …

Domain wall motion control for racetrack memory applications

D Kumar, T **, S Al Risi, R Sbiaa… - IEEE Transactions …, 2018 - ieeexplore.ieee.org
Increasing demand for large capacity data storage can only be fulfilled by hard disk drives
(HDDs) and to some extent by solid-state drives (SSDs). However, HDDs are favorable in …