Silicon carbide (SiC) is widely used in high power electronic devices. However, defects on
the SiC significantly reduce the yield and decrease the performance of SiC. Accurate …

Silicon carbide (SiC) technology is evolving as a promising alternative to legacy silicon-
based devices for energy-efficient power electronics applications. However, under extreme …

Due to the increasing appeal to the high voltage, high temperature and high fre-quency
applications, Silicon Carbide (SiC) is continuing attracting world's attention as one of the …

Silicon carbide is a wide-band gap semiconductor material which became the most
desirable candidate for automotive applications making power transistors with high power …

The neutron is a subatomic neutral particle which makes it pivotal for a variety of
applications. For instance, neutrons play key role in neutron scattering experiments for …

Single event upset simulation performed for radiation study over the device by studying
ionized current generation. In this paper, we are discussing the investigation of n-type SiC …

Homogeneity and heterogeneity are one of the critically studied and implementable
concepts, become vital constituents in develo** advanced electronic devices. In …