Novel photonic applications of silicon carbide

H Ou, X Shi, Y Lu, M Kollmuss, J Steiner, V Tabouret… - Materials, 2023 - mdpi.com
Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique
photonic properties facilitated by the advances of nanotechnologies such as nanofabrication …

Recent advances in silicon carbide chemical mechanical polishing technologies

CH Hsieh, CY Chang, YK Hsiao, CCA Chen, CC Tu… - Micromachines, 2022 - mdpi.com
Chemical mechanical polishing (CMP) is a well-known technology that can produce
surfaces with outstanding global planarization without subsurface damage. A good CMP …

A Review on Modular Converter Topologies Based on WBG Semiconductor Devices in Wind Energy Conversion Systems

A Athwer, A Darwish - Energies, 2023 - mdpi.com
This paper presents a comprehensive review on the employment of wide bandgap (WBG)
semiconductor power devices in wind energy conversion systems (WECSs). Silicon-carbide …

Watching (De) Intercalation of 2D metals in epitaxial graphene: insight into the role of defects

F Niefind, Q Mao, N Nayir, M Kowalik, JJ Ahn… - Small, 2024 - Wiley Online Library
Intercalation forms heterostructures, and over 25 elements and compounds are intercalated
into graphene, but the mechanism for this process is not well understood. Here, the de …

Surface micromorphology and nanostructures evolution in hybrid laser processes of slicing and polishing single crystal 4H-SiC

Y Li, Z Zhang, Q Song, H Shi, Y Hou, S Yue… - Journal of Materials …, 2024 - Elsevier
Slicing and post-treatment of SiC crystals have been a significant challenge in the integrated
circuit and microelectronics industry. To compete with wire-sawing and mechanical grinding …

[HTML][HTML] Sympetalous defects in metalorganic vapor phase epitaxy (MOVPE)-grown homoepitaxial β-Ga2O3 films

J Cooke, P Ranga, A Bhattacharyya, X Cheng… - Journal of Vacuum …, 2023 - pubs.aip.org
We report a new type of structural defect in β-Ga 2 O 3 homoepitaxial thin films grown by
metalorganic vapor phase epitaxy, which we have dubbed as “sympetalous defects.” These …

Explainable deep learning system for advanced silicon and silicon carbide electrical wafer defect map assessment

RE Sarpietro, C Pino, S Coffa, A Messina… - IEEE …, 2022 - ieeexplore.ieee.org
The recent increasing demand of Silicon-on-Chip devices has triggered a significant impact
on the industrial processes of leading semiconductor companies. The semiconductor …

A survey on machine and deep learning in semiconductor industry: methods, opportunities, and challenges

AC Huang, SH Meng, TJ Huang - Cluster Computing, 2023 - Springer
The technology of big data analysis and artificial intelligence deep learning has been
actively cross-combined with various fields to increase the effect of its original low single …

An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures

J Qian, L Shi, M **, M Bhattacharya, A Shimbori, H Yu… - Micromachines, 2024 - mdpi.com
The body diode degradation in SiC power MOSFETs has been demonstrated to be caused
by basal plane dislocation (BPD)-induced stacking faults (SFs) in the drift region. To …

Opto-electrical properties of amorphous silicon carbide thin films adjustably prepared by magnetron sputtering at room temperature

L Ye, J Zheng, C Guo, Y Hu, J Yu, X Zhu, T Chen - Applied Surface Science, 2023 - Elsevier
The application of silicon carbide (SiC) thin films is extensive, and they can be prepared at
room temperature using magnetron sputtering. In this study, a wide range of deposition …