[BOOK][B] Semiconductor surfaces and interfaces
W Mönch - 2013 - books.google.com
Semiconductor Surfaces and Interfaces deals with structural and electronic properties of
semiconductor surfaces and interfaces. The first part introduces the general aspects of …
semiconductor surfaces and interfaces. The first part introduces the general aspects of …
[BOOK][B] EXAFS: basic principles and data analysis
BK Teo - 2012 - books.google.com
The phenomenon of Extended X-Ray Absorption Fine Structure (EXAFS) has been known
for some time and was first treated theoretically by Kronig in the 1930s. Recent …
for some time and was first treated theoretically by Kronig in the 1930s. Recent …
Electronic properties on silicon-transition metal interface compounds
C Calandra, O Bisi, G Ottaviani - Surface Science Reports, 1985 - Elsevier
The article reviews recent experimental and theoretical work on the electronic properties of
transition metal-silicides and of silicon-silicide interfaces. After a short description of the …
transition metal-silicides and of silicon-silicide interfaces. After a short description of the …
d and f metal interface formation on silicon
G Rossi - Surface Science Reports, 1987 - Elsevier
In the first part of this review a description is presented on the experimental approach to the
study of the formation of semiconductor interfaces, with a review of the relevant techniques …
study of the formation of semiconductor interfaces, with a review of the relevant techniques …
Structure of the (√3 × √3 )R30° Ag/Si(111) surface from first-principles calculations
YG Ding, CT Chan, KM Ho - Physical review letters, 1991 - APS
The structure of (√ 3×√ 3) Ag/Si (111) is investigated using first-principles total-energy
calculations. The lowest-energy configuration consists of a top layer of Ag atoms arranged …
calculations. The lowest-energy configuration consists of a top layer of Ag atoms arranged …
Mechanisms of epitaxial growth
I Markov, S Stoyanov - Contemporary physics, 1987 - Taylor & Francis
Abstract 'Epitaxy'means order in the relative orientation of identical crystals nucleated and
grown on a large single-crystal face. Every crystal of the deposited material is oriented in …
grown on a large single-crystal face. Every crystal of the deposited material is oriented in …
Study on the Si (111)√ 3×√ 3-Ag surface structure by x-ray diffraction
T Takahashi, S Nakatani, N Okamoto… - Japanese journal of …, 1988 - iopscience.iop.org
The surface structure of Si (111)√ 3×√ 3-Ag has been analyzed from the X-ray intensity
versus energy curves measured both for the integral-and fractional-order spots. A modified …
versus energy curves measured both for the integral-and fractional-order spots. A modified …
Structure analysis of the Si(111)√3 × √3 R30°-Ag surface
The structure of the Si (111)√ 3×√ 3 R30-Ag surface has been analyzed with a novel form
of low-energy ion-scattering spectroscopy and energy-minimization calculations. The …
of low-energy ion-scattering spectroscopy and energy-minimization calculations. The …
Structure of the Ag/Si (111) surface by scanning tunneling microscopy
RJ Wilson, S Chiang - Physical review letters, 1987 - APS
We present the first real-space images, obtained by scanning tunneling microscopy, which
show the ordered atomic structures of the Ag/Si (111) surface for several submonolayer …
show the ordered atomic structures of the Ag/Si (111) surface for several submonolayer …
Refinement of the Si (111) 3× 3-Ag structure by surface X-ray diffraction
T Takahashi, S Nakatani - Surface science, 1993 - Elsevier
The structure of the Si (111) 3× 3-Ag surface has been determined from the least-squares
analysis of nine integral order and nine fractional order rod profiles observed by surface X …
analysis of nine integral order and nine fractional order rod profiles observed by surface X …