The future of memristors: Materials engineering and neural networks
K Sun, J Chen, X Yan - Advanced Functional Materials, 2021 - Wiley Online Library
Abstract From Deep Blue to AlphaGo, artificial intelligence and machine learning are
booming, and neural networks have become the hot research direction. However, due to the …
booming, and neural networks have become the hot research direction. However, due to the …
A comprehensive review on emerging artificial neuromorphic devices
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
Neuromorphic nanoelectronic materials
Memristive and nanoionic devices have recently emerged as leading candidates for
neuromorphic computing architectures. While top-down fabrication based on conventional …
neuromorphic computing architectures. While top-down fabrication based on conventional …
Robust memristors based on layered two-dimensional materials
M Wang, S Cai, C Pan, C Wang, X Lian, Y Zhuo… - Nature …, 2018 - nature.com
Van der Waals heterostructures are formed by stacking layers of different two-dimensional
materials and offer the possibility to design new materials with atomic-level precision. By …
materials and offer the possibility to design new materials with atomic-level precision. By …
Memristive devices for computing
Memristive devices are electrical resistance switches that can retain a state of internal
resistance based on the history of applied voltage and current. These devices can store and …
resistance based on the history of applied voltage and current. These devices can store and …
[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
Continued progress in high-speed computing depends on breakthroughs in both materials
synthesis and device architectures,,,. The performance of logic and memory can be …
synthesis and device architectures,,,. The performance of logic and memory can be …
Nanoelectronics Using Metal–Insulator Transition
Metal–insulator transition (MIT) coupled with an ultrafast, significant, and reversible resistive
change in Mott insulators has attracted tremendous interest for investigation into next …
change in Mott insulators has attracted tremendous interest for investigation into next …
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
This review article summarized the recent understanding of resistance switching (RS)
behavior in several binary oxide thin film systems. Among the various RS materials and …
behavior in several binary oxide thin film systems. Among the various RS materials and …
Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology
Volatile threshold switching (TS) and non‐volatile memory switching (MS) are two typical
resistive switching (RS) phenomena in oxides, which could form the basis for memory …
resistive switching (RS) phenomena in oxides, which could form the basis for memory …