Recent advances in GaN‐based power HEMT devices
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …
systems require the development of power devices that can outperform conventional Si …
Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
This article critically reviews the architectural novelties, emerging materials (substrate,
buffer, barrier & contact materials), technological advancements, processing techniques …
buffer, barrier & contact materials), technological advancements, processing techniques …
Monolithically integrating III‐nitride quantum structure for full‐spectrum white LED via bandgap engineering heteroepitaxial growth
B Fan, X Zhao, J Zhang, Y Sun, H Yang… - Laser & Photonics …, 2023 - Wiley Online Library
Great progress made by heteroepitaxial growth technology encourages rapid development
of III‐nitride heteroepitaxial structures and their applications in extensive fields. Particularly …
of III‐nitride heteroepitaxial structures and their applications in extensive fields. Particularly …
Analysis of low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs for terminal applications
In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is
analyzed from the perspective of DC and pulse characteristics, for terminal applications …
analyzed from the perspective of DC and pulse characteristics, for terminal applications …
Overview of power electronic switches: A summary of the past, state-of-the-art and illumination of the future
As the need for green and effective utilization of energy continues to grow, the
advancements in the energy and power electronics industry are constantly driven by this …
advancements in the energy and power electronics industry are constantly driven by this …
Ti/Au/Al/Ni/Au low contact resistance and sharp edge acuity for highly scalable AlGaN/GaN HEMTs
In this letter, we have reported a novel metal scheme Ti/Au/Al/Ni/Au for ohmic contact on
AlGaN/GaN high-electron-mobility transistors. The reported metal scheme is observed to …
AlGaN/GaN high-electron-mobility transistors. The reported metal scheme is observed to …
High-efficiency AlGaN/GaN/graded-AlGaN/GaN double-channel HEMTs for sub-6G power amplifier applications
In this article, the superior power performance of a double-channel high-electron-mobility
transistor (HEMT) operating at a high drain voltage of sub-6 GHz was demonstrated using a …
transistor (HEMT) operating at a high drain voltage of sub-6 GHz was demonstrated using a …
Electroluminescence and Gate Carrier Dynamics in a Schottky-type p-GaN Gate Double-Channel GaN HEMT
Electroluminescence (EL) of a Schottky-type-GaN gate double-channel (DC-) GaN high-
electron-mobility transistor (HEMT) was investigated to understand the mechanism of the …
electron-mobility transistor (HEMT) was investigated to understand the mechanism of the …
GaN High-Electron-Mobility-Transistor on Free- Standing GaN Substrate With Low Contact Resistance and State-of-the-Art fT × LG Value
In this article, we report on demonstrating high-performance AlGaN/GaN high-electron-
mobility-transistor (HEMT) on free-standing GaN (FS-GaN) substrate with low contact …
mobility-transistor (HEMT) on free-standing GaN (FS-GaN) substrate with low contact …
Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: a simulation study
This work describes the self-heating effects on the behavior of AlGaN/GaN-based high-
electron Mobility Transistors (HEMTs), which are grownon Sapphire substrate, using electro …
electron Mobility Transistors (HEMTs), which are grownon Sapphire substrate, using electro …