Electrochemical metallization memories—fundamentals, applications, prospects
This review focuses on electrochemical metallization memory cells (ECM), highlighting their
advantages as the next generation memories. In a brief introduction, the basic switching …
advantages as the next generation memories. In a brief introduction, the basic switching …
A review of three‐dimensional resistive switching cross‐bar array memories from the integration and materials property points of view
Issues in the circuitry, integration, and material properties of the two‐dimensional (2D) and
three‐dimensional (3D) crossbar array (CBA)‐type resistance switching memories are …
three‐dimensional (3D) crossbar array (CBA)‐type resistance switching memories are …
Electrical switching and bistability in organic/polymeric thin films and memory devices
Recently, films created by incorporating metallic nanoparticles into organic or polymeric
materials have demonstrated electrical bistability, as well as the memory effect, when …
materials have demonstrated electrical bistability, as well as the memory effect, when …
Nanoscale memory elements based on solid-state electrolytes
We report on the fabrication and characterization of nanoscale memory elements based on
solid electrolytes. When combined with silver, chalcogenide glasses such as Se-rich Ge-Se …
solid electrolytes. When combined with silver, chalcogenide glasses such as Se-rich Ge-Se …
Prospective of semiconductor memory devices: from memory system to materials
CS Hwang - Advanced Electronic Materials, 2015 - Wiley Online Library
The ever‐increasing demand for higher‐capacity digital memory shows no sign of declining.
The conventional strategy for meeting such demand, ie shrinking of the memory cell size …
The conventional strategy for meeting such demand, ie shrinking of the memory cell size …
Ag doped chalcogenide glasses and their applications
M Frumar, T Wagner - Current opinion in solid state and materials science, 2003 - Elsevier
Ag-doped chalcogenide glasses and amorphous thin films, their preparation, properties,
photodo**, photoinduced surface deposition and applications, are reviewed, expanding …
photodo**, photoinduced surface deposition and applications, are reviewed, expanding …
Conductive bridging random access memory—materials, devices and applications
MN Kozicki, HJ Barnaby - Semiconductor Science and …, 2016 - iopscience.iop.org
We present a review and primer on the subject of conductive bridging random access
memory (CBRAM), a metal ion-based resistive switching technology, in the context of current …
memory (CBRAM), a metal ion-based resistive switching technology, in the context of current …
Cation-based resistance change memory
A potential replacement for current charge-based memory technologies in the nanoscale
device regime is a form of resistance change memory (RRAM) which utilizes cation transport …
device regime is a form of resistance change memory (RRAM) which utilizes cation transport …
Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems
Different coplanar Pt∕ Ag structures were prepared by photolithography on Si O 2
substrates, and Pt∕ H 2 O∕ Ag cells were formed by adding de-ionized H 2 O to the …
substrates, and Pt∕ H 2 O∕ Ag cells were formed by adding de-ionized H 2 O to the …
Self-directed channel memristor for high temperature operation
KA Campbell - Microelectronics journal, 2017 - Elsevier
Ion-conducting memristors comprised of the layered chalcogenide materials Ge 2 Se
3/SnSe/Ag are described. The memristor, termed a self-directed channel (SDC) device, can …
3/SnSe/Ag are described. The memristor, termed a self-directed channel (SDC) device, can …