Pressure is an important thermodynamic parameter, allowing the increase of matter density
by reducing interatomic distances that result in a change of interatomic interactions. In this …

Recent studies on In 2 O 3 have revealed a rich phase diagram and have led to the
discovery of new In 2 O 3 polymorphs, including the synthesis and ambient recovery of Pbcn …

This study outlines the preparation and characterization of a unique superlattice composed
of indium oxide (In2O3) vertex-truncated nano-octahedra, along with an exploration of its …

We report a joint experimental and theoretical investigation of the high pressure structural
and vibrational properties of terbium sesquioxide (Tb2O3). Powder X-ray diffraction and …

We report a high-pressure X-ray diffraction study on bixbyite-type Gd 2 O 3 showing that the
addition of 4.3 mol% of GdO increases the pressure stability of Gd 2 O3. In our experiments …

Materials made of indium oxide (In2O3) are now being used as a potential component of the
next generation of computers and communication devices. Density functional theory is used …

In 2 O 3 is extensively studied as a wide-band gap semiconductor because of its numerous
uses in spintronics and optoelectronics devices. Recently, researchers have primarily …

We report the results of single-crystal X-ray diffraction and Raman spectroscopy studies of
scandium oxide, Sc 2 O 3, at ambient temperature under high pressure up to 55 and 28 …

Ga2O3 and In2O3 are among the most important wide-bandgap semiconductors for
transparent electronics and ultraviolet optoelectronics. Their pronounced polymorphism …

The substitutional semiconductor obtained by do** In _ 2 O _ 3 In 2 O 3 with aluminum
metal has potential applications in high-quality gas sensors and nanoelectronic devices …