Two dimensional hexagonal boron nitride (2D-hBN): synthesis, properties and applications

K Zhang, Y Feng, F Wang, Z Yang… - Journal of Materials …, 2017 - pubs.rsc.org
Two dimensional hexagonal boron nitride (2D-hBN), an isomorph of graphene with a very
similar layered structure, is uniquely featured by its exotic opto-electrical properties together …

Hexagonal boron nitride on III–V compounds: a review of the synthesis and applications

Y Yang, Y Peng, MF Saleem, Z Chen, W Sun - Materials, 2022 - mdpi.com
Since the successful separation of graphene from its bulk counterpart, two-dimensional (2D)
layered materials have become the focus of research for their exceptional properties. The …

GaN Surface Passivation by MoS2 Coating

D Chen, J Jiang, TFK Weatherley, JF Carlin… - Nano Letters, 2024 - ACS Publications
In this study, we investigate the impact of two-dimensional MoS2 coating on the optical
properties of surface GaN/AlGaN quantum wells (QWs). A strong enhancement in GaN QW …

A critical review on the junction temperature measurement of light emitting diodes

C Cengiz, M Azarifar, M Arik - Micromachines, 2022 - mdpi.com
In the new age of illumination, light emitting diodes (LEDs) have been proven to be the most
efficient alternative to conventional light sources. Yet, in comparison to other lighting …

2D materials enhancing tribological performance in bulk and composite coatings: a review

A Taghizadeh Tabrizi, N Enzinger - Graphene and 2D Materials, 2024 - Springer
The tribological properties of materials, such as wear, scratch resistance, corrosion
resistance, and surface hardness, are heavily influenced by surface conditions. Therefore …

Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

Z He, X Zhang, TS Pieshkov, AE Yekta, T Terlier… - Applied Physics …, 2024 - pubs.aip.org
In this Letter, low-temperature (400 C) chemical vapor deposition-grown boron nitride (BN)
was investigated as the gate dielectric for AlGaN/GaN metal–insulator–semiconductor high …

Toward h-BN/GaN Schottky diodes: spectroscopic study on the electronic phenomena at the interface

E Zdanowicz, AP Herman, K Opołczyńska… - … Applied Materials & …, 2022 - ACS Publications
Hexagonal boron nitride (h-BN), together with other members of the van der Waals crystal
family, has been studied for over a decade, both in terms of fundamental and applied …

[HTML][HTML] AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric

TH Yang, J Brown, K Fu, J Zhou, K Hatch… - Applied Physics …, 2021 - pubs.aip.org
AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs)
were fabricated on Si substrates with a 10 nm boron nitride (BN) layer as a gate dielectric …

Optical characterization of nanocrystalline boron nitride thin films grown by atomic layer deposition

M Snure, Q Paduano, M Hamilton, J Shoaf, JM Mann - Thin Solid Films, 2014 - Elsevier
Boron nitride thin films were grown on sapphire and Si substrates by atomic layer deposition
from triethylborane (TEB) and NH 3 precursors in the temperature range of 500 to 900° C. By …

Direct Synthesis of Vertical Self-Assembly Oriented Hexagonal Boron Nitride on Gallium Nitride and Ultrahigh Photoresponse Ultraviolet Photodetectors

Y Peng, Y Yang, K **ao, Y Yang, H Ding, J Deng… - Nanomaterials, 2023 - mdpi.com
The applications of three-dimensional materials combined with two-dimensional materials
are attractive for constructing high-performance electronic and photoelectronic devices …