Within a power converter, multiple currents are usually measured for control, protection,
and/or monitoring. They are therefore important sources of information, which must …

This article gives insights into recent developments in the field of power semiconductor gate
drivers that exhibit intelligent features. Such features are active switching transient control …

Survivability of silicon-carbide (SiC) mosfet modules during short circuit (SC) is essential for
modern power electronics systems due to large economic implications. SiC mosfet modules …

Silicon-carbide (SiC) transistors with growing readiness for the power converter market have
raised an emerging need for high-performance gate driver (GD) units to maximize their …

This paper proposes short circuit and overload gate-driver dual-protection scheme based on
the parasitic inductance between the Kelvin-and power-source terminals of high-current SiC …

This article presents a short-circuit and over current protection method using a new current
sensor-tunnel magnetoresistance (TMR). The resistance of TMR changes with the magnetic …

Accurate current measurement is the basis for power devices to achieve switching
characteristics evaluation, real-time control, reliability diagnosis, life prediction, etc. With the …

This paper describes the design process of a high-power-density 100 kW (34 kW/L) traction
inverter for electric vehicles, operating at an ambient temperature of 105° C. A detailed …

Featured Application Pulsed generator for biomedical and biotechnology applications.
Abstract Pulsed electric fields in the sub-microsecond range are being increasingly used in …

This paper present overcurrent and short-circuit protection methods for medium voltage
silicon carbide (SiC) MOSFETs. Contrary to other protection methods such as a Rogowski …