The study of the charge collection of the normal‐collector configuration
CC Tan, VKS Ong… - Progress in Photovoltaics …, 2013 - Wiley Online Library
Charge collection is one of the crucial processes to collect the induced current when a
semiconductor sample is subjected to some external excitations such as the electron or …
semiconductor sample is subjected to some external excitations such as the electron or …
An analytical expression for charge collection probability from within a U-shaped junction well
CC Tan, VKS Ong - IEEE transactions on electron devices, 2010 - ieeexplore.ieee.org
The analytical expression for the charge collection probability within a U-shaped junction
well is derived in this paper. The U-shaped junction well is a common feature found in most …
well is derived in this paper. The U-shaped junction well is a common feature found in most …
A direct method for charge collection probability computation using the reciprocity theorem
This paper presents a simple and direct method for computing the charge collection
probability distribution by utilizing the reciprocity theorem. The proposed method simplifies …
probability distribution by utilizing the reciprocity theorem. The proposed method simplifies …
The effect of electron range on electron beam induced current collection and a simple method to extract an electron range for any generation function
A Lahreche, Y Beggah, R Corkish - Ultramicroscopy, 2011 - Elsevier
The effect of electron range on electron beam induced current (EBIC) is demonstrated and
the problem of the choice of the optimal electron ranges to use with simple uniform and point …
the problem of the choice of the optimal electron ranges to use with simple uniform and point …
Improved calculation of charge collection probability from within the junction well
In this paper, the challenges to compute the charge collection probability from within an L-
shaped junction well using the existing analytical expression are discussed. A solution is …
shaped junction well using the existing analytical expression are discussed. A solution is …
Computation of charge collection probability for any collecting junction shape
Electron-beam-induced current (EBIC) of the scanning electron microscope (SEM) has been
widely used for semiconductor devices and materials characterizations. The charge …
widely used for semiconductor devices and materials characterizations. The charge …
Charge collection probability: Normal-collector configuration
CC Tan, VKS Ong… - … Symposium on Integrated …, 2011 - ieeexplore.ieee.org
The charge collection probability is the basis in the study of induced current generated when
the semiconductor sample is subjected to some external excitation. In this paper, we present …
the semiconductor sample is subjected to some external excitation. In this paper, we present …
Computation of charge collection probability for any collecting junction shape
Electron-beam-induced current (EBIC) of the scanning electron microscope (SEM) has been
widely used for semiconductor devices and materials characterizations. The charge …
widely used for semiconductor devices and materials characterizations. The charge …
[CITATION][C] Corrections to “Charge Collection From Within a Collecting Junction Well”[May 08 1220-1228]
Corrections to “Charge Collection From Within a Collecting Junction Well”
[May 08 1220-1228] Page 1 2358 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57 …
[May 08 1220-1228] Page 1 2358 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57 …