Strained-layer quantum well materials grown by MOCVD for diode laser application
Strained-layer quantum wells have revolutionized the performance of near-infrared diode
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …
Progress toward III–V bismide alloys for near-and midinfrared laser diodes
Bismuth-containing III-V alloys open-up a range of possibilities for practical applications in
semiconductor lasers, photovoltaics, spintronics, photodiodes, and thermoelectrics. Of …
semiconductor lasers, photovoltaics, spintronics, photodiodes, and thermoelectrics. Of …
Temperature dependence of band gaps in dilute bismides
Abstract Knowledge about the temperature dependence of the fundamental band-gap
energy of semiconductors is very important and constitutes the basis for develo** …
energy of semiconductors is very important and constitutes the basis for develo** …
GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique
Abstract We report a GaAs 0.96 Bi 0.04/GaAs multiple quantum well (MQW) light emitting
diode (LED) grown by molecular beam epitaxy using a two-substrate-temperature (TST) …
diode (LED) grown by molecular beam epitaxy using a two-substrate-temperature (TST) …
Demonstration of a high-efficiency short-cavity iii-v-on-si c-band dfb laser diode
In this paper we demonstrate a high wall-plug efficiency and low threshold current for
heterogeneously integrated III-V-on-Silicon distributed feedback (DFB) lasers. Above 12 …
heterogeneously integrated III-V-on-Silicon distributed feedback (DFB) lasers. Above 12 …
Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties
Deep-level defects in n-type GaAs1− x Bi x having 0≤ x≤ 0.023 grown on GaAs by
molecular beam epitaxy at substrate temperature of 378° C have been injvestigated by deep …
molecular beam epitaxy at substrate temperature of 378° C have been injvestigated by deep …
1.142 μm GaAsBi/GaAs quantum well lasers grown by molecular beam epitaxy
X Wu, W Pan, Z Zhang, Y Li, C Cao, J Liu, L Zhang… - Acs …, 2017 - ACS Publications
As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are
considered to have a high energy efficiency and an insensitive temperature dependence of …
considered to have a high energy efficiency and an insensitive temperature dependence of …
Optical gain and lasing properties of InP/AlGaInP quantum-dot laser diode emitting at 660 nm
We investigated the optical gain properties and lasing characteristics of a pulsed electrically
pumped laser structure, which consists of a single layer of self-assembled InP quantum dots …
pumped laser structure, which consists of a single layer of self-assembled InP quantum dots …
Understanding and reducing deleterious defects in the metastable alloy GaAsBi
Technological applications of novel metastable materials are frequently inhibited by
abundant defects residing in these materials. Using first-principles methods, we investigate …
abundant defects residing in these materials. Using first-principles methods, we investigate …
Assessing the nature of the distribution of localised states in bulk GaAsBi
A comprehensive assessment of the nature of the distribution of sub band-gap energy states
in bulk GaAsBi is presented using power and temperature dependent photoluminescence …
in bulk GaAsBi is presented using power and temperature dependent photoluminescence …