Uniform do** of graphene close to the Dirac point by polymer-assisted assembly of molecular dopants

H He, KH Kim, A Danilov, D Montemurro, L Yu… - Nature …, 2018 - nature.com
Tuning the charge carrier density of two-dimensional (2D) materials by incorporating
dopants into the crystal lattice is a challenging task. An attractive alternative is the surface …

Graphene quantum Hall effect devices for AC and DC electrical metrology

M Kruskopf, S Bauer, Y Pimsut… - IEEE transactions on …, 2021 - ieeexplore.ieee.org
A new type of graphene-based quantum Hall standards is tested for electrical quantum
metrology applications at alternating current (ac) and direct current (dc). The devices are …

Experimental evidence for dissipationless transport of the chiral edge state of the high-field Chern insulator in nanodevices

Z Ying, S Zhang, B Chen, B Jia, F Fei, M Zhang… - Physical Review B, 2022 - APS
We study the dissipationless transport properties of chiral edge state (CES) in the Chern
insulator MnBi 2 Te 4 devices. A near-zero longitudinal resistance and a quantized Hall …

Epitaxial graphene for quantum resistance metrology

M Kruskopf, RE Elmquist - Metrologia, 2018 - iopscience.iop.org
Graphene-based quantised Hall resistance standards promise high precision for the unit
ohm under less exclusive measurement conditions, enabling the use of compact …

Aperiodic quantum oscillations in the two-dimensional electron gas at the LaAlO3/SrTiO3 interface

K Rubi, J Gosteau, R Serra, K Han, S Zeng… - npj Quantum …, 2020 - nature.com
Despite several attempts, the intimate electronic structure of two-dimensional electron
systems buried at the interface between LaAlO3 and SrTiO3 still remains to be …

Unconventional reentrant quantum Hall effect in a HgTe/CdHgTe double quantum well

MV Yakunin, SS Krishtopenko, W Desrat… - Physical Review B, 2020 - APS
We report on the observation of an unconventional structure of the quantum Hall effect
(QHE) in ap-type HgTe/Cd x Hg 1− x Te double quantum well (DQW) consisting of two HgTe …

Magneto-transport in inverted HgTe quantum wells

I Yahniuk, SS Krishtopenko, G Grabecki… - npj Quantum …, 2019 - nature.com
HgTe quantum wells (QWs) are two-dimensional semiconductor systems that change their
properties at the critical thickness dc, corresponding to the band inversion and topological …

Magnetic and electric field dependent charge transfer in perovskite/graphene field effect transistors

ND Cottam, JS Austin, C Zhang… - Advanced Electronic …, 2023 - Wiley Online Library
Stable all‐inorganic CsPbX3 perovskite nanocrystals (PNCs) with high optical yield can be
used in combination with graphene as photon sensors with high responsivity (up to 106 …

Tailoring Permanent Charge Carrier Densities in Epitaxial Graphene on SiC by Functionalization with F4‐TCNQ

Y Yin, A Chatterjee, D Momeni… - Advanced Physics …, 2022 - Wiley Online Library
The outstanding properties and the potential for large‐scale fabrication open a wide field for
electronic applications of epitaxial graphene on silicon carbide substrates. However, reliable …

Quantum transport in functionalized epitaxial graphene without electrostatic gating

EH Lock, JC Prestigiacomo, P Dev, A Nath… - Carbon, 2021 - Elsevier
Graphene, the first isolated two-dimensional material, has captivated researchers for the last
decade due to its unique structure that leads to novel electronic, chemical, mechanical, and …