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Semiconductor quantum dots as an ideal source of polarization-entangled photon pairs on-demand: a review
More than 80 years have passed since the first publication on entangled quantum states.
Over this period, the concept of spookily interacting quantum states became an emerging …
Over this period, the concept of spookily interacting quantum states became an emerging …
III–V nanowire photovoltaics: Review of design for high efficiency
This article reviews recent developments in nanowire‐based photovoltaics (PV) with an
emphasis on III–V semiconductors including growth mechanisms, device fabrication and …
emphasis on III–V semiconductors including growth mechanisms, device fabrication and …
Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions
Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …
in a fully controllable way and is thus of great interest in both basic science and device …
RETRACTED ARTICLE: Epitaxy of advanced nanowire quantum devices
Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices.
In particular, topological phases of matter hosting non-Abelian quasiparticles (such as …
In particular, topological phases of matter hosting non-Abelian quasiparticles (such as …
[کتاب][B] Nucleation theory and growth of nanostructures
VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
Observation of strongly entangled photon pairs from a nanowire quantum dot
A bright photon source that combines high-fidelity entanglement, on-demand generation,
high extraction efficiency, directional and coherent emission, as well as position control at …
high extraction efficiency, directional and coherent emission, as well as position control at …
Ultraclean emission from InAsP quantum dots in defect-free wurtzite InP nanowires
We report on the ultraclean emission from single quantum dots embedded in pure wurtzite
nanowires. Using a two-step growth process combining selective-area and vapor–liquid …
nanowires. Using a two-step growth process combining selective-area and vapor–liquid …
Bright single InAsP quantum dots at telecom wavelengths in position-controlled InP nanowires: the role of the photonic waveguide
We report on the site-selected growth of bright single InAsP quantum dots embedded within
InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a …
InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a …
Unity yield of deterministically positioned quantum dot single photon sources
We report on a platform for the production of single photon devices with a fabrication yield of
100%. The sources are based on InAsP quantum dots embedded within position-controlled …
100%. The sources are based on InAsP quantum dots embedded within position-controlled …
Bright nanoscale source of deterministic entangled photon pairs violating Bell's inequality
Global, secure quantum channels will require efficient distribution of entangled photons.
Long distance, low-loss interconnects can only be realized using photons as quantum …
Long distance, low-loss interconnects can only be realized using photons as quantum …