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Synthesis of doped, ternary, and quaternary materials by atomic layer deposition: a review
In the past decade, atomic layer deposition (ALD) has become an important thin film
deposition technique for applications in nanoelectronics, catalysis, and other areas due to its …
deposition technique for applications in nanoelectronics, catalysis, and other areas due to its …
Process–property relationship in high-k ALD SrTiO 3 and BaTiO 3: a review
Perovskites exhibit a wide range of remarkable material properties that have the potential to
advance various scientific fields. These properties originate in their unique structure and …
advance various scientific fields. These properties originate in their unique structure and …
Functional perovskites by atomic layer deposition–an overview
The last 20 years have seen a massive increase in reports on complex oxides with
functional properties synthesized by atomic layer deposition (ALD). Many of these …
functional properties synthesized by atomic layer deposition (ALD). Many of these …
Suitability of binary oxides for molecular-beam epitaxy source materials: A comprehensive thermodynamic analysis
We have conducted a comprehensive thermodynamic analysis of the volatility of 128 binary
oxides to evaluate their suitability as source materials for oxide molecular-beam epitaxy …
oxides to evaluate their suitability as source materials for oxide molecular-beam epitaxy …
[HTML][HTML] Atomic layer deposition of functional multicomponent oxides
Advances in the fabrication of multicomponent oxide thin films are crucial to prepare specific
compositions with precise structures and controlled interfaces. This will enable the …
compositions with precise structures and controlled interfaces. This will enable the …
Recent developments in molecular precursors for atomic layer deposition
AL Johnson, JD Parish - 2018 - books.rsc.org
One field of organometallic and materials chemistry that has seen great advancements over
the last 20 years is that of atomic layer deposition (ALD), and in particular the development …
the last 20 years is that of atomic layer deposition (ALD), and in particular the development …
All-room-temperature processed 17.25%-crystalline silicon solar cell
In creating the next generation of crystalline silicon (c-Si) solar cells, the goals are to
improve energy conversion efficiency and reduce costs. Here, we demonstrate all-room …
improve energy conversion efficiency and reduce costs. Here, we demonstrate all-room …
On the Importance of Nanoparticle Necks and Carbon Impurities for Charge Trap** in TiO2
MJ Elser, E Neige, T Berger, M Chiesa… - The Journal of …, 2023 - ACS Publications
Particle attachment and neck formation inside TiO2 nanoparticle networks determine
materials performance in sensing, photo-electrochemistry, and catalysis. Nanoparticle necks …
materials performance in sensing, photo-electrochemistry, and catalysis. Nanoparticle necks …
High-throughput methodology for the realization of high-entropy sub-nm equivalent-oxide-thickness high-dielectric-constant Ba (Ti, Zr, Ta, Hf, Mo) O3 film-based metal …
This paper reports the use of a high-throughput sputtering technique for the fabrication of
high-entropy high-dielectric-constant (high-k) Ba (Ti, Zr, Ta, Hf, Mo) O 3 film libraries on Si …
high-entropy high-dielectric-constant (high-k) Ba (Ti, Zr, Ta, Hf, Mo) O 3 film libraries on Si …
[HTML][HTML] Atomic layer deposition of epitaxial ferroelectric barium titanate on Si (001) for electronic and photonic applications
Epitaxial barium titanate (BTO) thin films are grown on strontium titanate-buffered Si (001)
using atomic layer deposition (ALD) at 225 C. X-ray diffraction confirms compressive strain …
using atomic layer deposition (ALD) at 225 C. X-ray diffraction confirms compressive strain …