Industry 4.0 is accelerating the growth of connected devices, resulting in an exponential
increase in generated data. The current semiconductor technology is facing challenges in …

Electric double layer (EDL) gating is a technique in which ions in an electrolyte modulate the
charge transport in an electronic material through electrical field effects. A sub-nanogap …

The analog resistive switching properties of amorphous InGaZnOx (a-IGZO)-based devices
with Al as the top and bottom electrodes and an Al–Ox interface layer inserted on the bottom …

Nonvolatile memories using two-dimensional materials and high-k oxides have gained
attention for their potential to achieve robust analog switching, easy memristive device …

Resistive random access memory (ReRAM) devices have been gaining popularity in recent
years as prime contenders to achieve high-performance non-volatile memory, as such …

Memristor crossbar arrays can compose the efficient hardware for artificial intelligent
applications. However, the requirements for a linear and symmetric synaptic weight update …

The development of neuromorphic computing is expected to enable the computer to realize
the integration of storage and computation. The development of memristors provides …

Flexible electronics have seen extensive research over the past years due to their potential
stretchability and adaptability to non‐flat surfaces. They are key to realizing low‐power …

A pioneering integration of oxide semiconductor memristors with optoelectronic features is
presented, surpassing binary limitations to realize multi‐valued synaptic operations …

Abstract Direct Laser Writing (DLW) has been increasingly selected as a microfabrication
route for efficient, cost‐effective, high‐resolution material synthesis and conversion …