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Two dimensional semiconducting materials for ultimately scaled transistors
T Wei, Z Han, X Zhong, Q ** Controlled Ohmic Contact
van der Waals heterostructures (vdWHs) of metallic (m-) and semiconducting (s-) transition-
metal dichalcogenides (TMDs) exhibit an ideal metal/semiconductor (M/S) contact in a field …
metal dichalcogenides (TMDs) exhibit an ideal metal/semiconductor (M/S) contact in a field …
Efficient Modulation of Schottky to Ohmic Contact in MoSi2N4/M3C2 (M = Zn, Cd, Hg) van der Waals Heterostructures
X Wei, M Zhang, X Zhang, Y Lin… - The Journal of Physical …, 2024 - ACS Publications
A strong Fermi level pinning (FLP) effect can induce a large Schottky barrier in
metal/semiconductor contacts; reducing the Schottky barrier height (SBH) to form an Ohmic …
metal/semiconductor contacts; reducing the Schottky barrier height (SBH) to form an Ohmic …
Spiking neurons from tunable Gaussian heterojunction transistors
Spiking neural networks exploit spatiotemporal processing, spiking sparsity, and high
interneuron bandwidth to maximize the energy efficiency of neuromorphic computing. While …
interneuron bandwidth to maximize the energy efficiency of neuromorphic computing. While …
Highly Sensitive MoS2 Photodetectors Enabled with a Dry-Transferred Transparent Carbon Nanotube Electrode
Fabricating electronic and optoelectronic devices by transferring pre-deposited metal
electrodes has attracted considerable attention, owing to the improved device performance …
electrodes has attracted considerable attention, owing to the improved device performance …
Infrared Proximity Sensors Based on Photo‐Induced Tunneling in van der Waals Integration
YR Kim, TL Phan, KW Cho, WT Kang… - Advanced Functional …, 2021 - Wiley Online Library
Infrared (IR) detectors based on photo‐induced tunneling in van der Waals heterostructures
(vdWHs) of graphene/h‐BN/graphene or MoS2/h‐BN/graphene exhibit extremely low dark …
(vdWHs) of graphene/h‐BN/graphene or MoS2/h‐BN/graphene exhibit extremely low dark …
Electric field screening in gate‐tunable van der waals 2D‐metal/InSe junctions
T Shen, J Liu, X Liu, P Cheng, JC Ren… - Advanced Functional …, 2022 - Wiley Online Library
The prediction of the dielectric response in 2D metal–semiconductor junctions (MSJs) is
challenging since the screening is inhomogeneous. Herein, a generalized model is …
challenging since the screening is inhomogeneous. Herein, a generalized model is …
CVD-grown carbon nanotube branches on black silicon stems for ultrahigh absorbance in wide wavelength range
We report a black silicon-carbon nanotube (bSi-CNT) hybrid structure for ultrahigh
absorbance at wide spectral range of wavelength (300–1200 nm). CNTs are densely grown …
absorbance at wide spectral range of wavelength (300–1200 nm). CNTs are densely grown …
Two-Dimensional Vertical Transistor with One-Dimensional van der Waals Contact
Z Mei, X Li, L Liang, Y Li, Z Zhao, Z Zhou, Q Li, S Fan… - ACS …, 2024 - ACS Publications
Two-dimensional (2D) materials enable vertical field effect transistors (VFETs), which
provide an alternative path for scaling down the channels of transistors. The challenge is the …
provide an alternative path for scaling down the channels of transistors. The challenge is the …